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公开(公告)号：US20090014775A1
公开(公告)日：2009-01-15
申请号：US12233670
申请日：2008-09-19
申请人： Digh Hisamoto , Kan Yasui , Tetsuya Ishimaru , Shinichiro Kimura , Daisuke Okada
发明人： Digh Hisamoto , Kan Yasui , Tetsuya Ishimaru , Shinichiro Kimura , Daisuke Okada
IPC分类号： H01L29/00
CPC分类号： G11C16/0425 , G11C16/12 , G11C16/14 , G11C16/26 , G11C16/3454 , G11C16/3459
摘要： An operation scheme for operating stably a semiconductor nonvolatile memory device is provided.When hot-hole injection is conducted in the semiconductor nonvolatile memory device of a split gate structure, the hot-hole injection is verified using a crossing point that does not change with time. Thus, an erased state can be verified without being aware of any time-varying changes.Also, programming or programming/erasure is conducted by repeating pulse voltage or multi-step voltage application to a gate section multiple times.
摘要翻译： 提供一种稳定运行半导体非易失性存储器件的操作方案。 当在分裂栅极结构的半导体非易失性存储器件中进行热空穴注入时，使用不随时间变化的交叉点来验证热孔注入。 因此，可以验证擦除状态，而不知道任何时变变化。 此外，通过将多次脉冲电压或多级电压施加到栅极部分进行编程或编程/擦除。
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公开(公告)号：US20070183206A1
公开(公告)日：2007-08-09
申请号：US11727592
申请日：2007-03-27
申请人： Digh Hisamoto , Kan Yasui , Tetsuya Ishimaru , Shinichiro Kimura , Daisuke Okada
发明人： Digh Hisamoto , Kan Yasui , Tetsuya Ishimaru , Shinichiro Kimura , Daisuke Okada
CPC分类号： G11C16/0425 , G11C16/12 , G11C16/14 , G11C16/26 , G11C16/3454 , G11C16/3459
摘要： An operation scheme for operating stably a semiconductor nonvolatile memory device is provided. When hot-hole injection is conducted in the semiconductor nonvolatile memory device of a split gate structure, the hot-hole injection is verified using a crossing point that does not change with time. Thus, an erased state can be verified without being aware of any time-varying changes. Also, programming or programming/erasure is conducted by repeating pulse voltage or multi-step voltage application to a gate section multiple times.
摘要翻译： 提供一种稳定运行半导体非易失性存储器件的操作方案。 当在分裂栅极结构的半导体非易失性存储器件中进行热空穴注入时，使用不随时间变化的交叉点来验证热孔注入。 因此，可以验证擦除状态，而不知道任何时变变化。 此外，通过将多次脉冲电压或多级电压施加到栅极部分进行编程或编程/擦除。
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公开(公告)号：US08472258B2
公开(公告)日：2013-06-25
申请号：US13269425
申请日：2011-10-07
申请人： Digh Hisamoto , Kan Yasui , Tetsuya Ishimaru , Shinichiro Kimura , Daisuke Okada
发明人： Digh Hisamoto , Kan Yasui , Tetsuya Ishimaru , Shinichiro Kimura , Daisuke Okada
CPC分类号： G11C16/0425 , G11C16/12 , G11C16/14 , G11C16/26 , G11C16/3454 , G11C16/3459
摘要： An operation scheme for operating stably a semiconductor nonvolatile memory device is provided.When hot-hole injection is conducted in the semiconductor nonvolatile memory device of a split gate structure, the hot-hole injection is verified using a crossing point that does not change with time. Thus, an erased state can be verified without being aware of any time-varying changes.Also, programming or programming/erasure is conducted by repeating pulse voltage or multi-step voltage application to a gate section multiple times.
摘要翻译： 提供一种稳定运行半导体非易失性存储器件的操作方案。 当在分裂栅极结构的半导体非易失性存储器件中进行热空穴注入时，使用不随时间变化的交叉点来验证热孔注入。 因此，可以验证擦除状态，而不知道任何时变变化。 此外，通过将多次脉冲电压或多级电压施加到栅极部分进行编程或编程/擦除。
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公开(公告)号：US20120026798A1
公开(公告)日：2012-02-02
申请号：US13269425
申请日：2011-10-07
申请人： Digh HISAMOTO , Kan Yasui , Tetsuya Ishimaru , Shinichiro Kimura , Daisuke Okada
发明人： Digh HISAMOTO , Kan Yasui , Tetsuya Ishimaru , Shinichiro Kimura , Daisuke Okada
IPC分类号： G11C16/10
CPC分类号： G11C16/0425 , G11C16/12 , G11C16/14 , G11C16/26 , G11C16/3454 , G11C16/3459
摘要： An operation scheme for operating stably a semiconductor nonvolatile memory device is provided.When hot-hole injection is conducted in the semiconductor nonvolatile memory device of a split gate structure, the hot-hole injection is verified using a crossing point that does not change with time. Thus, an erased state can be verified without being aware of any time-varying changes.Also, programming or programming/erasure is conducted by repeating pulse voltage or multi-step voltage application to a gate section multiple times.
摘要翻译： 提供一种稳定运行半导体非易失性存储器件的操作方案。 当在分裂栅极结构的半导体非易失性存储器件中进行热空穴注入时，使用不随时间变化的交叉点来验证热孔注入。 因此，可以验证擦除状态，而不知道任何时变变化。 此外，通过将多次脉冲电压或多级电压施加到栅极部分进行编程或编程/擦除。
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公开(公告)号：US08064261B2
公开(公告)日：2011-11-22
申请号：US12787158
申请日：2010-05-25
申请人： Digh Hisamoto , Kan Yasui , Tetsuya Ishimaru , Shinichiro Kimura , Daisuke Okada
发明人： Digh Hisamoto , Kan Yasui , Tetsuya Ishimaru , Shinichiro Kimura , Daisuke Okada
CPC分类号： G11C16/0425 , G11C16/12 , G11C16/14 , G11C16/26 , G11C16/3454 , G11C16/3459
摘要： An operation scheme for operating stably a semiconductor nonvolatile memory device is provided.When hot-hole injection is conducted in the semiconductor nonvolatile memory device of a split gate structure, the hot-hole injection is verified using a crossing point that does not change with time. Thus, an erased state can be verified without being aware of any time-varying changes.Also, programming or programming/erasure is conducted by repeating pulse voltage or multi-step voltage application to a gate section multiple times.
摘要翻译： 提供一种稳定运行半导体非易失性存储器件的操作方案。 当在分裂栅结构的半导体非易失性存储器件中进行热孔注入时，使用不随时间变化的交叉点来验证热孔注入。 因此，可以验证擦除状态，而不知道任何时变变化。 此外，通过将多次脉冲电压或多级电压施加到栅极部分进行编程或编程/擦除。
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公开(公告)号：US20100232231A1
公开(公告)日：2010-09-16
申请号：US12787158
申请日：2010-05-25
申请人： Digh HISAMOTO , Kan Yasui , Tetsuya Ishimaru , Shinichiro Kimura , Daisuke Okada
发明人： Digh HISAMOTO , Kan Yasui , Tetsuya Ishimaru , Shinichiro Kimura , Daisuke Okada
CPC分类号： G11C16/0425 , G11C16/12 , G11C16/14 , G11C16/26 , G11C16/3454 , G11C16/3459
摘要： An operation scheme for operating stably a semiconductor nonvolatile memory device is provided.When hot-hole injection is conducted in the semiconductor nonvolatile memory device of a split gate structure, the hot-hole injection is verified using a crossing point that does not change with time. Thus, an erased state can be verified without being aware of any time-varying changes.Also, programming or programming/erasure is conducted by repeating pulse voltage or multi-step voltage application to a gate section multiple times.
摘要翻译： 提供一种稳定运行半导体非易失性存储器件的操作方案。 当在分裂栅极结构的半导体非易失性存储器件中进行热空穴注入时，使用不随时间变化的交叉点来验证热孔注入。 因此，可以验证擦除状态，而不知道任何时变变化。 此外，通过将多次脉冲电压或多级电压施加到栅极部分进行编程或编程/擦除。
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公开(公告)号：US07212444B2
公开(公告)日：2007-05-01
申请号：US11137518
申请日：2005-05-26
申请人： Digh Hisamoto , Kan Yasui , Tetsuya Ishimaru , Shinichiro Kimura , Daisuke Okada
发明人： Digh Hisamoto , Kan Yasui , Tetsuya Ishimaru , Shinichiro Kimura , Daisuke Okada
CPC分类号： G11C16/0425 , G11C16/12 , G11C16/14 , G11C16/26 , G11C16/3454 , G11C16/3459
摘要： An operation scheme for operating stably a semiconductor nonvolatile memory device is provided.When hot-hole injection is conducted in the semiconductor nonvolatile memory device of a split gate structure, the hot-hole injection is verified using a crossing point that does not change with time. Thus, an erased state can be verified without being aware of any time-varying changes.Also, programming or programming/erasure is conducted by repeating pulse voltage or multi-step voltage application to a gate section multiple times.
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公开(公告)号：US20050265080A1
公开(公告)日：2005-12-01
申请号：US11137518
申请日：2005-05-26
申请人： Digh Hisamoto , Kan Yasui , Tetsuya Ishimaru , Shinichiro Kimura , Daisuke Okada
发明人： Digh Hisamoto , Kan Yasui , Tetsuya Ishimaru , Shinichiro Kimura , Daisuke Okada
CPC分类号： G11C16/0425 , G11C16/12 , G11C16/14 , G11C16/26 , G11C16/3454 , G11C16/3459
摘要： An operation scheme for operating stably a semiconductor nonvolatile memory device is provided. When hot-hole injection is conducted in the semiconductor nonvolatile memory device of a split gate structure, the hot-hole injection is verified using a crossing point that does not change with time. Thus, an erased state can be verified without being aware of any time-varying changes. Also, programming or programming/erasure is conducted by repeating pulse voltage or multi-step voltage application to a gate section multiple times.
摘要翻译： 提供一种稳定运行半导体非易失性存储器件的操作方案。 当在分裂栅极结构的半导体非易失性存储器件中进行热空穴注入时，使用不随时间变化的交叉点来验证热孔注入。 因此，可以验证擦除状态，而不知道任何时变变化。 此外，通过将多次脉冲电压或多级电压施加到栅极部分进行编程或编程/擦除。
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公开(公告)号：US07443731B2
公开(公告)日：2008-10-28
申请号：US11727592
申请日：2007-03-27
申请人： Digh Hisamoto , Kan Yasui , Tetsuya Ishimaru , Shinichiro Kimura , Daisuke Okada
发明人： Digh Hisamoto , Kan Yasui , Tetsuya Ishimaru , Shinichiro Kimura , Daisuke Okada
CPC分类号： G11C16/0425 , G11C16/12 , G11C16/14 , G11C16/26 , G11C16/3454 , G11C16/3459
摘要： An operation scheme for operating stably a semiconductor nonvolatile memory device is provided.When hot-hole injection is conducted in the semiconductor nonvolatile memory device of a split gate structure, the hot-hole injection is verified using a crossing point that does not change with time. Thus, an erased state can be verified without being aware of any time-varying changes.Also, programming or programming/erasure is conducted by repeating pulse voltage or multi-step voltage application to a gate section multiple times.
摘要翻译： 提供一种稳定运行半导体非易失性存储器件的操作方案。 当在分裂栅极结构的半导体非易失性存储器件中进行热空穴注入时，使用不随时间变化的交叉点来验证热孔注入。 因此，可以验证擦除状态，而不知道任何时变变化。 此外，通过将多次脉冲电压或多级电压施加到栅极部分进行编程或编程/擦除。
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公开(公告)号：US07751255B2
公开(公告)日：2010-07-06
申请号：US12233670
申请日：2008-09-19
申请人： Digh Hisamoto , Kan Yasui , Tetsuya Ishimaru , Shinichiro Kimura , Daisuke Okada
发明人： Digh Hisamoto , Kan Yasui , Tetsuya Ishimaru , Shinichiro Kimura , Daisuke Okada
CPC分类号： G11C16/0425 , G11C16/12 , G11C16/14 , G11C16/26 , G11C16/3454 , G11C16/3459
摘要： An operation scheme for operating stably a semiconductor nonvolatile memory device is provided.When hot-hole injection is conducted in the semiconductor nonvolatile memory device of a split gate structure, the hot-hole injection is verified using a crossing point that does not change with time. Thus, an erased state can be verified without being aware of any time-varying changes.Also, programming or programming/erasure is conducted by repeating pulse voltage or multi-step voltage application to a gate section multiple times.
摘要翻译： 提供一种稳定运行半导体非易失性存储器件的操作方案。 当在分裂栅极结构的半导体非易失性存储器件中进行热空穴注入时，使用不随时间变化的交叉点来验证热孔注入。 因此，可以验证擦除状态，而不知道任何时变变化。 此外，通过将多次脉冲电压或多级电压施加到栅极部分进行编程或编程/擦除。
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