A semiconductor structure and a manufacturing method for the same are provided. The semiconductor structure includes a first doped well, a first doped electrode, a second doped electrode, doped strips and a doped top region. The doped strips are on the first doped well between the first doped electrode and the second doped electrode. The doped strips are separated from each other. The doped top region is on the doped strips and extended on the first doped well between the doped strips. The first doped well and the doped top region have a first conductivity type. The doped strips have a second conductivity type opposite to the first conductivity type.