Invention Grant
- Patent Title: Semiconductor devices with active semiconductor height variation
- Patent Title (中): 具有半导体高度变化的半导体器件
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Application No.: US13607023Application Date: 2012-09-07
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Publication No.: US08497556B2Publication Date: 2013-07-30
- Inventor: David E. Brown , Hans Van Meer , Sey-Ping Sun
- Applicant: David E. Brown , Hans Van Meer , Sey-Ping Sun
- Applicant Address: US CA Sunnyvale
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: Volpe and Koenig, P.C.
- Main IPC: H01L31/119
- IPC: H01L31/119
Abstract:
A semiconductor product has different active thicknesses of silicon on a single semiconductor substrate. The thickness of the silicon layer is changed either by selectively adding silicon or subtracting silicon from an original layer of silicon. The different active thicknesses are suitable for use in different types of devices, such as diodes and transistors.
Public/Granted literature
- US20120326279A1 METHOD FOR FORMING SEMICONDUCTOR DEVICES WITH ACTIVE SILICON HEIGHT VARIATION Public/Granted day:2012-12-27
Information query
IPC分类:
