Invention Grant
- Patent Title: 6F2 DRAM cell
- Patent Title (中): 6F2 DRAM单元
-
Application No.: US13169864Application Date: 2011-06-27
-
Publication No.: US08519462B2Publication Date: 2013-08-27
- Inventor: Yih Wang , M. Clair Webb , Nick Lindert , Swaminathan Sivakumar , Kevin X. Zhang , Dinesh Somasekhar
- Applicant: Yih Wang , M. Clair Webb , Nick Lindert , Swaminathan Sivakumar , Kevin X. Zhang , Dinesh Somasekhar
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L27/108
- IPC: H01L27/108
Abstract:
A 6F2 DRAM cell with paired cells is described. In one embodiment the cell pairs are separated by n-type isolation transistors having gates defining dummy word lines. The dummy word lines are fabricated from a metal with a work function favoring p-channel devices.
Public/Granted literature
- US20120326218A1 6F2 DRAM Cell Public/Granted day:2012-12-27
Information query
IPC分类:
