Invention Grant
US08519462B2 6F2 DRAM cell 有权
6F2 DRAM单元

6F2 DRAM cell
Abstract:
A 6F2 DRAM cell with paired cells is described. In one embodiment the cell pairs are separated by n-type isolation transistors having gates defining dummy word lines. The dummy word lines are fabricated from a metal with a work function favoring p-channel devices.
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