发明授权
- 专利标题： System and method for estimating the junction temperature of a light emitting diode
- 专利标题（中）： 用于估计发光二极管的结温的系统和方法
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申请号： US12863744申请日： 2009-01-27
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公开(公告)号： US08534914B2公开(公告)日： 2013-09-17
- 发明人: Viet Nguyen Hoang , Radu Surdeanu , Pascal Bancken , Benoit Bataillou , David Van Steenwinckel
- 申请人： Viet Nguyen Hoang , Radu Surdeanu , Pascal Bancken , Benoit Bataillou , David Van Steenwinckel
- 申请人地址： NL Eindhoven
- 专利权人： NXP B.V.
- 当前专利权人： NXP B.V.
- 当前专利权人地址： NL Eindhoven
- 优先权： EP08101015 20080128; EP08102270 20080304
- 国际申请： PCT/IB2009/050325 WO 20090127
- 国际公布： WO2009/095853 WO 20090806
- 主分类号： H05B33/08
- IPC分类号： H05B33/08 ; H05B37/02 ; G01K7/01
摘要：
A method of estimating the junction temperature of a light emitting diode comprises driving a forward bias current through the diode, the current comprising a square wave which toggles between high and low current values (Ihigh, llow), the high current value (lhigh) comprising an LED operation current, and the low current value (ILOW) comprising a non-zero measurement current. The forward bias voltage drop (Vf) is sampled and the forward bias voltage drop (Vflow) is determined at the measurement current (ILOW)—The temperature is derived from the determined forward bias voltage drop.