发明授权
- 专利标题: Non-volatile memory device
- 专利标题(中): 非易失性存储器件
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申请号: US13191581申请日: 2011-07-27
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公开(公告)号: US08547747B2公开(公告)日: 2013-10-01
- 发明人: Su-Kyoung Kim , Gil-Heyun Choi , Jong-Myeong Lee , In-Sun Park , Ji-Soon Park
- 申请人: Su-Kyoung Kim , Gil-Heyun Choi , Jong-Myeong Lee , In-Sun Park , Ji-Soon Park
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si
- 代理机构: Stanzione & Kim, LLP
- 优先权: KR10-2010-0113929 20101116
- 主分类号: G11C16/04
- IPC分类号: G11C16/04
摘要:
A non-volatile memory device is provided, including a substrate formed of a single crystalline semiconductor, pillar-shaped semiconductor patterns extending perpendicular to the substrate, a plurality of gate electrodes and a plurality of interlayer dielectric layers alternately stacked perpendicular to the substrate, and a charge spread blocking layer formed between the plurality of gate electrodes and the plurality of interlayer dielectric layers.
公开/授权文献
- US20120120728A1 NON-VOLATILE MEMORY DEVICE 公开/授权日:2012-05-17