发明授权
US08562798B2 Physical vapor deposition plasma reactor with RF source power applied to the target and having a magnetron 有权
具有RF源功率的物理气相沉积等离子体反应器施加到靶并具有磁控管

Physical vapor deposition plasma reactor with RF source power applied to the target and having a magnetron
摘要:
A physical vapor deposition reactor includes a metal sputter target, a D.C. sputter power source coupled to the metal sputter target and a wafer support pedestal facing the metal sputter target. A movable magnet array is adjacent a side of the metal sputter target opposite the wafer support pedestal. A solid metal RF feed rod engages the metal sputter target and extends from a surface of the target on a side opposite the wafer support pedestal. A VHF impedance match circuit is coupled to an end of the RF feed rod opposite the metal sputter target and a VHF RF power generator coupled to said VHF impedance match circuit. Preferably, the reactor of further includes a center axle about which the movable magnet array is rotatable, the center axle having an axially extending hollow passageway, the RF feed rod extending through the passageway.
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