发明授权
US08562798B2 Physical vapor deposition plasma reactor with RF source power applied to the target and having a magnetron
有权
具有RF源功率的物理气相沉积等离子体反应器施加到靶并具有磁控管
- 专利标题: Physical vapor deposition plasma reactor with RF source power applied to the target and having a magnetron
- 专利标题(中): 具有RF源功率的物理气相沉积等离子体反应器施加到靶并具有磁控管
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申请号: US11222231申请日: 2005-09-07
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公开(公告)号: US08562798B2公开(公告)日: 2013-10-22
- 发明人: Karl M. Brown , John Pipitone , Vineet Mehta
- 申请人: Karl M. Brown , John Pipitone , Vineet Mehta
- 申请人地址: US CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: US CA Santa Clara
- 代理商 Robert M. Wallace
- 主分类号: C23C14/00
- IPC分类号: C23C14/00 ; C23C14/32 ; C25B9/00 ; C25B11/00 ; C25B13/00 ; H01B11/02 ; H01B11/06 ; H02G3/04 ; H05K1/09
摘要:
A physical vapor deposition reactor includes a metal sputter target, a D.C. sputter power source coupled to the metal sputter target and a wafer support pedestal facing the metal sputter target. A movable magnet array is adjacent a side of the metal sputter target opposite the wafer support pedestal. A solid metal RF feed rod engages the metal sputter target and extends from a surface of the target on a side opposite the wafer support pedestal. A VHF impedance match circuit is coupled to an end of the RF feed rod opposite the metal sputter target and a VHF RF power generator coupled to said VHF impedance match circuit. Preferably, the reactor of further includes a center axle about which the movable magnet array is rotatable, the center axle having an axially extending hollow passageway, the RF feed rod extending through the passageway.
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