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    Physical vapor deposition plasma reactor with arcing suppression
    7.
    发明授权
    Physical vapor deposition plasma reactor with arcing suppression 有权
    具有电弧抑制的物理气相沉积等离子体反应器

    公开(公告)号：US07804040B2

    公开(公告)日：2010-09-28

    申请号：US11438496

    申请日：2006-05-22

    申请人： Karl M. Brown ,  Semyon Sherstinksy ,  Vineet H. Mehta ,  Wei W. Wang ,  John A. Pipitone ,  Kurt J. Ahmann ,  Armando Valverde, Jr.

    发明人： Karl M. Brown ,  Semyon Sherstinksy ,  Vineet H. Mehta ,  Wei W. Wang ,  John A. Pipitone ,  Kurt J. Ahmann ,  Armando Valverde, Jr.

    IPC分类号： B23K9/00

    CPC分类号： H01J37/3408 ,  C23C14/046 ,  C23C14/345 ,  C23C14/358 ,  H01J37/32082 ,  H01J37/32706 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76844

    摘要： A physical vapor deposition reactor includes a vacuum chamber with a sidewall, a ceiling and a retractable wafer support pedestal near a floor of the chamber, and a vacuum pump coupled to the chamber, the retractable wafer support pedestal having an internal electrode and a grounded base with a conductive annular flange extending from the base. A metal sputter target at the ceiling is energized by a high voltage D.C. source. The reactor has an RF plasma source power generator with a frequency suitable for exciting kinetic electrons is coupled to either the sputter target or to the internal electrode of the pedestal. A removable shield protects the sidewall and is grounded by plural compressible conductive tabs dispersed at generally uniform intervals on the annular flange and engaging a bottom edge of the shield whenever the retractable wafer support pedestal is in an unretracted position, each of the uniform intervals being less than a wavelength corresponding to the frequency of the RF plasma source power generator.

    摘要翻译： 物理气相沉积反应器包括具有侧壁的真空室，天花板和靠近室的地板附近的可缩回的晶片支撑基座，以及耦合到室的真空泵，所述可缩回晶片支撑基座具有内部电极和接地基座 具有从基座延伸的导电环形凸缘。 天花板上的金属溅射靶由高电压直流电源供电。 反应器具有RF等离子体源功率发生器，其具有适于激发动电子的频率，耦合到溅射靶或底座的内部电极。 可拆卸的屏蔽件保护侧壁并且通过在环形凸缘上以大致均匀间隔分散的多个可压缩导电片接地，并且每当可缩回的晶片支撑基座处于未受损的位置时，接合屏蔽的底部边缘，每个均匀间隔较小 比对应于RF等离子体源发生器的频率的波长。

    Method for forming a barrier layer in an integrated circuit in a plasma with source and bias power frequencies applied through the workpiece
    9.
    发明授权
    Method for forming a barrier layer in an integrated circuit in a plasma with source and bias power frequencies applied through the workpiece 有权
    在等离子体中的集成电路中形成阻挡层的方法，其中源极和偏置功率频率通过工件施加

    公开(公告)号：US07214619B2

    公开(公告)日：2007-05-08

    申请号：US11052010

    申请日：2005-02-03

    申请人： Karl M. Brown ,  John Pipitone ,  Vineet Mehta

    发明人： Karl M. Brown ,  John Pipitone ,  Vineet Mehta

    IPC分类号： H01L21/44

    CPC分类号： H01L21/76843 ,  C23C14/046 ,  C23C14/35 ,  C23C14/351 ,  H01J37/32706 ,  H01L21/2855 ,  H01L21/76844 ,  H01L21/76862 ,  H01L21/76865

    摘要： A barrier layer is formed in an integrated circuit by providing a metal target near a ceiling of the chamber and a wafer support pedestal facing the target near a floor of the chamber. A process gas is introduced into the vacuum chamber. A target-sputtering plasma is maintained at the target to produce a stream of principally neutral atoms flowing from the target toward the wafer for vapor deposition. A wafer-sputtering plasma is maintained near the wafer support pedestal to produce a stream of sputtering ions toward the wafer support pedestal for re-sputtering. The sputtering ions are accelerated across a plasma sheath at the wafer in a direction normal to a surface of the wafer to render the sputter etching highly selective for horizontal surfaces.

    摘要翻译： 在集成电路中通过在室的顶部附近提供金属靶并且在室的底部附近面向靶的晶片支撑台座，在集成电路中形成阻挡层。 将工艺气体引入真空室。 目标溅射等离子体保持在目标上以产生从目标流向晶片的主要中性原子的气流用于气相沉积。 在晶片支撑基座附近保持晶片溅射等离子体，以产生朝向晶片支撑基座的溅射离子流，用于再溅射。 溅射离子在垂直于晶片表面的方向上在晶片处跨越等离子体护套加速，以使溅射蚀刻对于水平表面具有高选择性。

    Radio frequency interference suppression ignition cable having a semiconductive polyolefin conductive core
    10.
    发明授权
    Radio frequency interference suppression ignition cable having a semiconductive polyolefin conductive core 失效
    具有半导体聚烯烃导电芯的射频干扰抑制点火电缆

    公开(公告)号：US5034719A

    公开(公告)日：1991-07-23

    申请号：US333137

    申请日：1989-04-04

    申请人： Karl M. Brown ,  Bruce D. Balcerski

    发明人： Karl M. Brown ,  Bruce D. Balcerski

    IPC分类号： D04C1/12 ,  H01B7/00

    CPC分类号： D04C1/12 ,  H01B7/0063

    摘要： An ignition cable having a layer of semi-conductive cross-linkable polyolefin extruded over a nonmetallic strength member to form a conductive core. An insulating layer is extruded over the conductive core and overlaid with a braid of glass yarn. A final layer of insulating material is applied over the braid of glass yarn to provide an external jacket. In an alternate embodiment, the braid of glass yarn is omitted.

    摘要翻译： 一种具有在非金属强度构件上挤出以形成导电芯的半导电可交联聚烯烃层的点火电缆。 绝缘层被挤压在导电芯上并且覆盖有玻璃纱编织物。 将绝缘材料的最后一层施加在玻璃纱线的编织物上以提供外部护套。 在替代实施例中，省略了玻璃纱的编织物。