Invention Grant
- Patent Title: Method for producing a single crystal of semiconductor material
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Application No.: US13799288Application Date: 2013-03-13
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Publication No.: US08580033B2Publication Date: 2013-11-12
- Inventor: Wilfried von Ammon , Ludwig Altmannshofer , Helge Riemann , Joerg Fischer
- Applicant: Siltronic AG
- Applicant Address: DE Munich
- Assignee: Siltronic AG
- Current Assignee: Siltronic AG
- Current Assignee Address: DE Munich
- Agency: Brooks Kushman P.C.
- Priority: DE102008038810 20080813
- Main IPC: C30B11/00
- IPC: C30B11/00 ; C30B17/00 ; C30B21/02 ; C30B28/06 ; C30B35/00 ; C30B13/00 ; C30B21/04 ; C30B28/08

Abstract:
A single crystal of semiconductor material is produced by a method of melting semiconductor material granules by means of a first induction heating coil on a dish with a run-off tube consisting of the semiconductor material, forming a melt of molten granules which extends from the run-off tube in the form of a melt neck and a melt waist to a phase boundary, delivering heat to the melt by means of a second induction heating coil which has an opening through which the melt neck passes, crystallizing the melt at the phase boundary, and delivering a cooling gas to the run-off tube and to the melt neck in order to control the axial position of an interface between the run-off tube and the melt neck.
Public/Granted literature
- US20130192518A1 METHOD FOR PRODUCING A SINGLE CRYSTAL OF SEMICONDUCTOR MATERIAL Public/Granted day:2013-08-01
Information query
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