公开(公告)号：US09422634B2

公开(公告)日：2016-08-23

申请号：US13705207

申请日：2012-12-05

Applicant: Siltronic AG

Inventor： Georg Raming ,  Ludwig Altmannshofer ,  Gundars Ratnieks ,  Johann Landrichinger ,  Josef Lobmeyer ,  Alfred Holzinger

IPC: C30B13/20 ,  C30B13/30 ,  C30B29/06

CPC classification number: C30B13/20 ,  C30B13/30 ,  C30B29/06 ,  Y10T117/1088

Abstract: Single crystals are produced by means of the floating zone method, wherein the single crystal crystallizes below a melt zone at a crystallization boundary, and the emission of crystallization heat is impeded by a reflector surrounding the single crystal, wherein the single crystal is heated in the region of an outer edge of the crystallization boundary by means of a heating device in a first zone, wherein a distance Δ between an outer triple point Ta at the outer edge of the crystallization boundary and a center Z of the crystallization boundary is influenced. An apparatus for producing the single crystal provides a heat source below the melting induction coil and above the reflector.

Abstract translation: 通过浮区法制备单晶，其中单晶在结晶边界处在熔融区以下结晶，并且结晶热的发射被围绕单晶的反射器阻碍，其中单晶在 通过第一区域中的加热装置，结晶边界的外边缘的区域，其中结晶边界外边缘处的外三重点Ta与结晶边界的中心Z之间的距离Δ受到影响。 用于制造单晶的装置在熔化感应线圈下方和反射器上方提供热源。

公开(公告)号：US20150203987A1

公开(公告)日：2015-07-23

申请号：US14417967

申请日：2013-07-01

Applicant: SILTRONIC AG

Inventor： Georg Raming ,  Ludwig Altmannshofer

IPC: C30B13/20

CPC classification number: C30B13/20 ,  C30B13/16 ,  C30B13/30 ,  C30B29/06 ,  Y10T117/1088

Abstract: A device for producing a single crystal by crystallizing the single crystal in a melt zone, comprising a housing, an inductor for generating heat in the melt zone, a reheater which surrounds and applies thermal radiation to the crystallizing single crystal, and a separating bottom which delimits downward an intermediate space between the reheater and a wall of the housing at a lower end of the reheater.

Abstract translation: 一种用于通过在熔融区中结晶单晶来制造单晶的装置，包括壳体，在熔融区中产生热的电感器，围绕并向结晶单晶施加热辐射的再热器，以及分离底部， 在再热器的下端向下限定再热器和壳体的壁之间的中间空间。

公开(公告)号：US11788201B2

公开(公告)日：2023-10-17

申请号：US17256138

申请日：2019-06-04

Applicant: SILTRONIC AG

Inventor： Ludwig Altmannshofer ,  Goetz Meisterernst ,  Gundars Ratnieks ,  Simon Zitzelsberger

IPC: C30B13/20 ,  C30B13/12 ,  C30B29/06 ,  C30B30/04 ,  H01L21/02 ,  C30B13/26

CPC classification number: C30B13/20 ,  C30B13/12 ,  C30B13/26 ,  C30B29/06 ,  C30B30/04 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02625

Abstract: Single crystals of semiconductor material are produced by an FZ method, wherein a molten zone is created between a feed rod and a growing single crystal; the method involving



melting feed rod material in a high frequency magnetic field of a first induction coil;
crystallizing material of the molten zone on top of the growing single crystal;
rotating the growing single crystal about an axis of rotation and changing the direction of rotation and the speed of rotation according to a predetermined pattern; and
imposing an alternating magnetic field of a second induction coil on the molten zone, wherein the alternating magnetic field is not axisymmetric with respect to the axis of rotation of the growing single crystal.

公开(公告)号：US20130160698A1

公开(公告)日：2013-06-27

申请号：US13705207

申请日：2012-12-05

Applicant: Siltronic AG

Inventor： Georg Raming ,  Ludwig Altmannshofer ,  Gundars Ratnieks ,  Johann Landrichinger ,  Josef Lobmeyer ,  Alfred Holzinger

IPC: C30B13/20

CPC classification number: C30B13/20 ,  C30B13/30 ,  C30B29/06 ,  Y10T117/1088

Abstract: Single crystals are produced by means of the floating zone method, wherein the single crystal crystallizes below a melt zone at a crystallization boundary, and the emission of crystallization heat is impeded by a reflector surrounding the single crystal, wherein the single crystal is heated in the region of an outer edge of the crystallization boundary by means of a heating device in a first zone, wherein a distance Δ between an outer triple point Ta at the outer edge of the crystallization boundary and a center Z of the crystallization boundary is influenced. An apparatus for producing the single crystal provides a heat source below the melting induction coil and above the reflector.

Abstract translation: 通过浮区法制备单晶，其中单晶在结晶边界处在熔融区以下结晶，并且结晶热的发射被围绕单晶的反射器阻碍，其中单晶在 区域，其结晶边界的外边缘与结晶边界的外边缘之间的外三重点Ta与结晶边界的中心Z之间的距离Delta受到影响。 用于制造单晶的装置在熔化感应线圈下方和反射器上方提供热源。

公开(公告)号：US09932690B2

公开(公告)日：2018-04-03

申请号：US14417967

申请日：2013-07-01

Applicant: SILTRONIC AG

Inventor： Georg Raming ,  Ludwig Altmannshofer

IPC: C30B13/20 ,  C30B13/30 ,  C30B13/16 ,  C30B29/06

CPC classification number: C30B13/20 ,  C30B13/16 ,  C30B13/30 ,  C30B29/06 ,  Y10T117/1088

Abstract: A device for producing a single crystal by crystallizing the single crystal in a melt zone, comprising a housing, an inductor for generating heat in the melt zone, a reheater which surrounds and applies thermal radiation to the crystallizing single crystal, and a separating bottom which delimits downward an intermediate space between the reheater and a wall of the housing at a lower end of the reheater.

公开(公告)号：US08580033B2

公开(公告)日：2013-11-12

申请号：US13799288

申请日：2013-03-13

Applicant: Siltronic AG

Inventor： Wilfried von Ammon ,  Ludwig Altmannshofer ,  Helge Riemann ,  Joerg Fischer

IPC: C30B11/00 ,  C30B17/00 ,  C30B21/02 ,  C30B28/06 ,  C30B35/00 ,  C30B13/00 ,  C30B21/04 ,  C30B28/08

CPC classification number: C30B11/006 ,  C30B11/001 ,  C30B11/003 ,  C30B11/02 ,  C30B11/10 ,  C30B13/08 ,  C30B13/20 ,  C30B29/06 ,  Y10T117/10 ,  Y10T117/1024 ,  Y10T117/1088 ,  Y10T117/1092

Abstract: A single crystal of semiconductor material is produced by a method of melting semiconductor material granules by means of a first induction heating coil on a dish with a run-off tube consisting of the semiconductor material, forming a melt of molten granules which extends from the run-off tube in the form of a melt neck and a melt waist to a phase boundary, delivering heat to the melt by means of a second induction heating coil which has an opening through which the melt neck passes, crystallizing the melt at the phase boundary, and delivering a cooling gas to the run-off tube and to the melt neck in order to control the axial position of an interface between the run-off tube and the melt neck.

公开(公告)号：US09932691B2

公开(公告)日：2018-04-03

申请号：US14945840

申请日：2015-11-19

Applicant: Siltronic AG

Inventor： Georg Raming ,  Ludwig Altmannshofer ,  Gundars Ratnieks ,  Martin Moeller ,  Frank Muemmler

IPC: C30B13/26 ,  C30B13/32 ,  C30B13/20 ,  C30B29/06

CPC classification number: C30B13/32 ,  C30B13/20 ,  C30B13/26 ,  C30B29/06

Abstract: A single crystal is grown in a float zone which is inductively heated and the crystallizing single crystal is rotated in a direction of rotation which is periodically reversed at intervals in accordance with an alternating plan, wherein a dwell time during which the single crystal is in a state of rest because of the reversal of the direction of rotation is limited to no more than 60 ms.

公开(公告)号：US20130192518A1

公开(公告)日：2013-08-01

申请号：US13799288

申请日：2013-03-13

Applicant: SILTRONIC AG

Inventor： Wilfried von Ammon ,  Ludwig Altmannshofer ,  Helge Riemann ,  Joerg Fischer

IPC: C30B11/00 ,  C30B11/10 ,  C30B11/02

CPC classification number: C30B11/006 ,  C30B11/001 ,  C30B11/003 ,  C30B11/02 ,  C30B11/10 ,  C30B13/08 ,  C30B13/20 ,  C30B29/06 ,  Y10T117/10 ,  Y10T117/1024 ,  Y10T117/1088 ,  Y10T117/1092

Abstract: A single crystal of semiconductor material is produced by a method of melting semiconductor material granules by means of a first induction heating coil on a dish with a run-off tube consisting of the semiconductor material, forming a melt of molten granules which extends from the run-off tube in the form of a melt neck and a melt waist to a phase boundary, delivering heat to the melt by means of a second induction heating coil which has an opening through which the melt neck passes, crystallizing the melt at the phase boundary, and delivering a cooling gas to the run-off tube and to the melt neck in order to control the axial position of an interface between the run-off tube and the melt neck.

Abstract translation: 半导体材料的单晶通过利用第一感应加热线圈在具有由半导体材料构成的流出管的盘子上熔化半导体材料颗粒的方法来制造，从而形成从运行中延伸的熔融颗粒的熔体 以熔体颈部的形式将熔融的腰部熔化成相边界，通过第二感应加热线圈向熔体输送热量，第二感应加热线圈具有熔体颈部通过的开口，使熔体在相边界处结晶 并且将冷却气体输送到流出管和熔融颈部，以便控制流出管和熔融颈部之间的界面的轴向位置。