METHOD FOR PRODUCING A SINGLE CRYSTAL OF SEMICONDUCTOR MATERIAL
    2.
    发明申请
    METHOD FOR PRODUCING A SINGLE CRYSTAL OF SEMICONDUCTOR MATERIAL 有权
    用于生产单晶半导体材料的方法

    公开(公告)号:US20130192518A1

    公开(公告)日:2013-08-01

    申请号:US13799288

    申请日:2013-03-13

    Applicant: SILTRONIC AG

    Abstract: A single crystal of semiconductor material is produced by a method of melting semiconductor material granules by means of a first induction heating coil on a dish with a run-off tube consisting of the semiconductor material, forming a melt of molten granules which extends from the run-off tube in the form of a melt neck and a melt waist to a phase boundary, delivering heat to the melt by means of a second induction heating coil which has an opening through which the melt neck passes, crystallizing the melt at the phase boundary, and delivering a cooling gas to the run-off tube and to the melt neck in order to control the axial position of an interface between the run-off tube and the melt neck.

    Abstract translation: 半导体材料的单晶通过利用第一感应加热线圈在具有由半导体材料构成的流出管的盘子上熔化半导体材料颗粒的方法来制造,从而形成从运行中延伸的熔融颗粒的熔体 以熔体颈部的形式将熔融的腰部熔化成相边界,通过第二感应加热线圈向熔体输送热量,第二感应加热线圈具有熔体颈部通过的开口,使熔体在相边界处结晶 并且将冷却气体输送到流出管和熔融颈部,以便控制流出管和熔融颈部之间的界面的轴向位置。

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