Plasma apparatus, gas distribution assembly for a plasma apparatus and processes therewith

Invention Grant

US08580076B2 Plasma apparatus, gas distribution assembly for a plasma apparatus and processes therewith 有权

Title translation: 等离子体装置，用于等离子体装置的气体分配组件及其处理

Please log in to see more content

Patent Title: Plasma apparatus, gas distribution assembly for a plasma apparatus and processes therewith
Patent Title (中): 等离子体装置，用于等离子体装置的气体分配组件及其处理
Application No.: US10249962

Application Date: 2003-05-22
Publication No.: US08580076B2

Publication Date: 2013-11-12
Inventor: Alan Frederick Becknell , Thomas James Buckley , David Ferris , Richard E. Pingree, Jr. , Palanikumaran Sakthivel , Aseem Kumar Srivastava , Carlo Waldfried
Applicant: Alan Frederick Becknell , Thomas James Buckley , David Ferris , Richard E. Pingree, Jr. , Palanikumaran Sakthivel , Aseem Kumar Srivastava , Carlo Waldfried
Applicant Address: US CA Fremont
Assignee: LAM Research Corporation
Current Assignee: LAM Research Corporation
Current Assignee Address: US CA Fremont
Main IPC: H01L21/3065
IPC: H01L21/3065 ; C23C16/00 ; C23C16/4412 ; C23C16/455 ; C23C16/45561 ; C23C16/45563 ; C23C16/46 ; C23C16/505 ; C23C16/511

Plasma apparatus, gas distribution assembly for a plasma apparatus and processes therewith

Abstract:

A plasma apparatus, various components of the plasma apparatus, and an oxygen free and nitrogen free processes for effectively removing photoresist material and post etch residues from a substrate with a carbon and/or hydrogen containing low k dielectric layer(s).

Abstract(Chinese):

等离子体装置，等离子体装置的各种部件，以及无氧和无氮的方法，用于有效地去除光致抗蚀剂材料，并且用含有低k电介质层的碳和/或氢的底物后蚀刻残留物。

Public/Granted literature

US20040238123A1 PLASMA APPARATUS, GAS DISTRIBUTION ASSEMBLY FOR A PLASMA APPARATUS AND PROCESSES THEREWITH Public/Granted day:2004-12-02

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/306	......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/31；绝缘层的后处理入H01L21/3105）
H01L21/3065	.......等离子腐蚀；活性离子腐蚀