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    FRONT END OF LINE PLASMA MEDIATED ASHING PROCESSES AND APPARATUS
    2.
    发明申请
    FRONT END OF LINE PLASMA MEDIATED ASHING PROCESSES AND APPARATUS 审中-公开
    前端等离子体介质喷砂处理和装置

    公开(公告)号：US20100130017A1

    公开(公告)日：2010-05-27

    申请号：US12275394

    申请日：2008-11-21

    申请人： Shijian Luo ,  Orlando Escorcia ,  Carlo Waldfried ,  Ivan Berry

    发明人： Shijian Luo ,  Orlando Escorcia ,  Carlo Waldfried ,  Ivan Berry

    IPC分类号： H01L21/3065

    CPC分类号： H01L21/31138 ,  H01J37/3244 ,  H01J37/32449

    摘要： Front end of line (FEOL) plasma mediated ashing processes for removing organic material from a substrate generally includes exposing the substrate to the plasma to selectively remove photoresist, implanted photoresist, polymers and/or residues from the substrate, wherein the plasma contains a ratio of active nitrogen and active oxygen that is larger than a ratio of active nitrogen and active oxygen obtainable from plasmas of gas mixtures comprising oxygen gas and nitrogen gas. The plasma exhibits high throughput while minimizing and/or preventing substrate oxidation and dopant bleaching. Plasma apparatuses are also described.

    摘要翻译： 用于从衬底去除有机材料的等离子体介质灰化过程的前端（FEOL）通常包括将衬底暴露于等离子体以选择性地从衬底去除光致抗蚀剂，植入的光致抗蚀剂，聚合物和/或残余物，其中等离子体包含 活性氮和活性氧，其大于可由包含氧气和氮气的气体混合物的等离子体获得的活性氮和活性氧的比例。 等离子体显示出高通量，同时最小化和/或防止底物氧化和掺杂剂漂白。 还描述了等离子体装置。

    PLASMA MEDIATED ASHING PROCESSES
    4.
    发明申请
    PLASMA MEDIATED ASHING PROCESSES 审中-公开
    等离子体介质吸附过程

    公开(公告)号：US20120024314A1

    公开(公告)日：2012-02-02

    申请号：US12844193

    申请日：2010-07-27

    申请人： SHIJIAN LUO ,  ORLANDO ESCORCIA ,  CARLO WALDFRIED

    发明人： SHIJIAN LUO ,  ORLANDO ESCORCIA ,  CARLO WALDFRIED

    IPC分类号： B08B7/00

    CPC分类号： G03F7/427 ,  H01J2237/3342

    摘要： Plasma mediated ashing processes for removing organic material from a substrate generally includes exposing the substrate to the plasma to selectively remove photoresist, implanted photoresist, polymers and/or residues from the substrate, wherein the plasma contains a ratio of active nitrogen and active oxygen that is larger than a ratio of active nitrogen and active oxygen obtainable from plasmas of gas mixtures comprising oxygen gas and nitrogen gas. The plasma exhibits high throughput while minimizing and/or preventing substrate oxidation and dopant bleaching. Plasma apparatuses are also described.

    摘要翻译： 用于从衬底去除有机材料的等离子体介质灰化过程通常包括将衬底暴露于等离子体以选择性地从衬底去除光致抗蚀剂，植入的光刻胶，聚合物和/或残余物，其中等离子体包含活性氮和活性氧的比例， 大于可由包含氧气和氮气的气体混合物的等离子体获得的活性氮和活性氧的比例。 等离子体显示出高通量，同时最小化和/或防止底物氧化和掺杂剂漂白。 还描述了等离子体装置。

    Plasma curing of MSQ-based porous low-k film materials
    7.
    发明授权
    Plasma curing of MSQ-based porous low-k film materials 失效
    基于MSQ的多孔低k薄膜材料的等离子体固化

    公开(公告)号：US06759098B2

    公开(公告)日：2004-07-06

    申请号：US09906276

    申请日：2001-07-16

    申请人： Qingyuan Han ,  Carlo Waldfried ,  Orlando Escorcia ,  Ralph Albano ,  Ivan L. Berry, III ,  Jeff Jang ,  Ian Ball

    发明人： Qingyuan Han ,  Carlo Waldfried ,  Orlando Escorcia ,  Ralph Albano ,  Ivan L. Berry, III ,  Jeff Jang ,  Ian Ball

    IPC分类号： B05D302

    CPC分类号： C01B33/126 ,  H01L21/02137 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/0234 ,  H01L21/31058 ,  H01L21/3122 ,  H01L21/31695

    摘要： Low dielectric constant film materials with improved elastic modulus. The method of making such film materials involves providing a porous methyl silsesquioxane based dielectric film material produced from a resin molecule containing at least 2 Si—CH3 groups and plasma curing the porous film material to convert the film into porous silica. Plasma curing of the porous film material yields a film with improved modulus and outgassing properties. The improvement in elastic modulus is typically greater than or about 100%, and more typically greater than or about 200%. The plasma cured porous film material can optionally be annealed. The annealing of the plasma cured film may reduce the dielectric constant of the film while maintaining an improved elastic modulus as compared to the plasma cured porous film material. The annealed, plasma cured film has a dielectric constant between about 1.1 and about 2.4 and an improved elastic modulus.

    摘要翻译： 具有改善弹性模量的低介电常数薄膜材料。 制造这种膜材料的方法包括提供由含有至少2个Si-CH 3基团的树脂分子制备的多孔甲基倍半硅氧烷基介电膜材料和等离子体固化多孔膜材料以将膜转化为多孔二氧化硅。 多孔膜材料的等离子体固化产生具有改进的模量和除气性质的膜。 弹性模量的改善通常大于或约100％，更典型地大于或约200％。 等离子体固化的多孔膜材料可以任选地退火。 与等离子体固化的多孔膜材料相比，等离子体固化膜的退火可以降低膜的介电常数，同时保持改善的弹性模量。 退火的等离子体固化膜的介电常数介于约1.1和约2.4之间，弹性模量提高。

    PLASMA MEDIATED ASHING PROCESSES
    8.
    发明申请
    PLASMA MEDIATED ASHING PROCESSES 审中-公开
    等离子体介质吸附过程

    公开(公告)号：US20110226280A1

    公开(公告)日：2011-09-22

    申请号：US13117488

    申请日：2011-05-27

    申请人： Ivan L. Berry ,  Carlo Waldfried ,  Shijian Luo ,  Orlando Escorcia

    发明人： Ivan L. Berry ,  Carlo Waldfried ,  Shijian Luo ,  Orlando Escorcia

    IPC分类号： B08B7/00 ,  B08B13/00 ,  C23F1/08

    CPC分类号： H01L21/02101 ,  G03F7/427 ,  H01L21/31138

    摘要： A plasma ashing process for removing photoresist, polymers and/or residues from a substrate comprises placing the substrate including the photoresist, polymers, and/or residues into a reaction chamber; generating a plasma from a gas mixture comprising oxygen gas (O2) and/or an oxygen containing gas; suppressing and/or reducing fast diffusing species in the plasma; and exposing the substrate to the plasma to selectively remove the photoresist, polymers, and/or residues from the substrate, wherein the plasma is substantially free from fast diffusing species.

    摘要翻译： 用于从基板去除光致抗蚀剂，聚合物和/或残留物的等离子体灰化处理包括将包括光致抗蚀剂，聚合物和/或残余物的基材放置在反应室中; 从包含氧气（O 2）和/或含氧气体的气体混合物产生等离子体; 抑制和/或减少等离子体中的快速扩散物质; 以及将所述衬底暴露于所述等离子体以选择性地从所述衬底去除所述光致抗蚀剂，聚合物和/或残留物，其中所述等离子体基本上不含快速扩散物质。

    Fluorine-free plasma curing process for porous low-k materials
    10.
    发明授权
    Fluorine-free plasma curing process for porous low-k materials 失效
    用于多孔低k材料的无氟等离子体固化工艺

    公开(公告)号：US07011868B2

    公开(公告)日：2006-03-14

    申请号：US10627894

    申请日：2003-07-24

    申请人： Carlo Waldfried ,  Qingyuan Han ,  Orlando Escorcia ,  Ralph Albano ,  Ivan L. Berry, III ,  Atsushi Shiota

    发明人： Carlo Waldfried ,  Qingyuan Han ,  Orlando Escorcia ,  Ralph Albano ,  Ivan L. Berry, III ,  Atsushi Shiota

    IPC分类号： C08J7/18 ,  H01L21/26 ,  H01L21/3105 ,  H01L21/314 ,  H05L1/24

    CPC分类号： H01L21/3105 ,  C01B33/126 ,  C23C16/56 ,  H01B3/46 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/0234 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/3124 ,  H01L21/31695 ,  Y10T428/31663

    摘要： Low dielectric constant porous materials with improved elastic modulus and material hardness. The process of making such porous materials involves providing a porous dielectric material and plasma curing the porous dielectric material with a fluorine-free plasma gas to produce a fluorine-free plasma cured porous dielectric material. Fluorine-free plasma curing of the porous dielectric material yields a material with improved modulus and material hardness, and with comparable dielectric constant. The improvement in elastic modulus is typically greater than or about 50%, and more typically greater than or about 100%. The improvement in material hardness is typically greater than or about 50%. It is emphasized that this abstract is provided to comply with the rules requiring an abstract which will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims 37 CFR §1.72(b).

    摘要翻译： 低介电常数多孔材料具有改善的弹性模量和材料硬度。 制造这种多孔材料的过程包括提供多孔电介质材料，并用无氟等离子体气体等离子体固化多孔介电材料，以产生无氟等离子体固化的多孔电介质材料。 多孔电介质材料的无氟等离子体固化产生具有改善的模量和材料硬度以及相当的介电常数的材料。 弹性模量的改善通常大于或约50％，更典型地大于或约100％。 材料硬度的改善通常大于或约50％。 要强调的是，该摘要被提供以符合要求摘要的规则，这将允许搜索者或其他读者快速确定技术公开的主题。 提交它的理解是，它不会用于解释或限制权利要求37 CFR§1.72（b）的范围或含义。