Invention Grant
US08581206B2 Focused ion beam system and sample processing method using the same
有权
聚焦离子束系统和样品处理方法使用相同
- Patent Title: Focused ion beam system and sample processing method using the same
- Patent Title (中): 聚焦离子束系统和样品处理方法使用相同
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Application No.: US12707024Application Date: 2010-02-17
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Publication No.: US08581206B2Publication Date: 2013-11-12
- Inventor: Xin Man , Kouji Iwasaki , Junichi Tashiro
- Applicant: Xin Man , Kouji Iwasaki , Junichi Tashiro
- Applicant Address: JP
- Assignee: SII Nanotechnology Inc.
- Current Assignee: SII Nanotechnology Inc.
- Current Assignee Address: JP
- Agency: Brinks Gilson & Lione
- Priority: JP2009-037307 20090220
- Main IPC: G21K5/10
- IPC: G21K5/10 ; G21K5/08 ; G21K1/00 ; G21K5/04

Abstract:
A focused ion beam system includes a sample holder having a fixing plane for fixing a sample, a sample base on which the sample holder is provided, a focused ion beam irradiating mechanism that irradiates a focused ion beam to the sample, microtweezers that hold the sample and have the axial direction at a predetermined angle to a surface of the sample base, an opening/closing mechanism that opens and closes the microtweezers, a rotating mechanism that rotates the microtweezers about the axial direction, and a moving mechanism that moves the position of the microtweezers.
Public/Granted literature
- US20100213386A1 FOCUSED ION BEAM SYSTEM AND SAMPLE PROCESSING METHOD USING THE SAME Public/Granted day:2010-08-26
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