发明授权
- 专利标题: Threshold voltage measurement device
- 专利标题(中): 阈值电压测量装置
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申请号: US13597733申请日: 2012-08-29
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公开(公告)号: US08582378B1公开(公告)日: 2013-11-12
- 发明人: Ching-Te Chuang , Shyh-Jye Jou , Geng-Cing Lin , Shao-Cheng Wang , Yi-Wei Lin , Ming-Chien Tsai , Wei-Chiang Shih , Nan-Chun Lien , Kuen-Di Lee , Jyun-Kai Chu
- 申请人: Ching-Te Chuang , Shyh-Jye Jou , Geng-Cing Lin , Shao-Cheng Wang , Yi-Wei Lin , Ming-Chien Tsai , Wei-Chiang Shih , Nan-Chun Lien , Kuen-Di Lee , Jyun-Kai Chu
- 申请人地址: TW Hsinchu
- 专利权人: National Chiao Tung University
- 当前专利权人: National Chiao Tung University
- 当前专利权人地址: TW Hsinchu
- 代理机构: Muncy, Geissler, Olds & Lowe, PLLC
- 优先权: TW101116911A 20120511
- 主分类号: G11C7/00
- IPC分类号: G11C7/00 ; G11C29/00
摘要:
A threshold voltage measurement device is disclosed. The device is coupled to a 6T SRAM. The SRAM comprises two inverters each coupled to a FET. Power terminals of one inverter are in a floating state; the drain and source of the FET coupled to the inverter are short-circuited. Two voltage selectors, a resistor, an amplifier and the SRAM are connected in a negative feedback way. Different bias voltages are applied to the SRAM for measuring threshold voltages of two FETs of the other inverter and the FET coupled to the other inverter. The present invention uses a single circuit to measure the threshold voltages of the three FETs without changing the physical structure of the SRAM. Thereby is accelerated the measurement and decreased the cost of the fabrication process and measurement instruments.
公开/授权文献
- US20130301343A1 THRESHOLD VOLTAGE MEASUREMENT DEVICE 公开/授权日:2013-11-14
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