公开(公告)号：US08582378B1

公开(公告)日：2013-11-12

申请号：US13597733

申请日：2012-08-29

Applicant: Ching-Te Chuang ,  Shyh-Jye Jou ,  Geng-Cing Lin ,  Shao-Cheng Wang ,  Yi-Wei Lin ,  Ming-Chien Tsai ,  Wei-Chiang Shih ,  Nan-Chun Lien ,  Kuen-Di Lee ,  Jyun-Kai Chu

Inventor： Ching-Te Chuang ,  Shyh-Jye Jou ,  Geng-Cing Lin ,  Shao-Cheng Wang ,  Yi-Wei Lin ,  Ming-Chien Tsai ,  Wei-Chiang Shih ,  Nan-Chun Lien ,  Kuen-Di Lee ,  Jyun-Kai Chu

IPC: G11C7/00 ,  G11C29/00

CPC classification number: G11C29/50004 ,  G11C11/41 ,  G11C29/12005

Abstract: A threshold voltage measurement device is disclosed. The device is coupled to a 6T SRAM. The SRAM comprises two inverters each coupled to a FET. Power terminals of one inverter are in a floating state; the drain and source of the FET coupled to the inverter are short-circuited. Two voltage selectors, a resistor, an amplifier and the SRAM are connected in a negative feedback way. Different bias voltages are applied to the SRAM for measuring threshold voltages of two FETs of the other inverter and the FET coupled to the other inverter. The present invention uses a single circuit to measure the threshold voltages of the three FETs without changing the physical structure of the SRAM. Thereby is accelerated the measurement and decreased the cost of the fabrication process and measurement instruments.

Abstract translation: 公开了一种阈值电压测量装置。 该器件耦合到6T SRAM。 SRAM包括两个各自耦合到FET的反相器。 一个逆变器的电源端子处于浮动状态; 耦合到逆变器的FET的漏极和源极短路。 两个电压选择器，电阻，放大器和SRAM以负反馈的方式连接。 不同的偏置电压被施加到SRAM，用于测量另一个反相器的两个FET和耦合到另一个反相器的FET的阈值电压。 本发明使用单个电路来测量三个FET的阈值电压，而不改变SRAM的物理结构。 从而加快了测量并降低了制造过程和测量仪器的成本。

公开(公告)号：US20130301343A1

公开(公告)日：2013-11-14

申请号：US13597733

申请日：2012-08-29

Applicant: Ching-Te Chuang ,  Shyh-Jye Jou ,  Geng-Cing Lin ,  Shao-Cheng Wang ,  Yi-Wei Lin ,  Ming-Chien Tsai ,  Wei-Chiang Shih ,  Nan-Chun Lien ,  Kuen-Di Lee ,  Jyun-Kai Chu

Inventor： Ching-Te Chuang ,  Shyh-Jye Jou ,  Geng-Cing Lin ,  Shao-Cheng Wang ,  Yi-Wei Lin ,  Ming-Chien Tsai ,  Wei-Chiang Shih ,  Nan-Chun Lien ,  Kuen-Di Lee ,  Jyun-Kai Chu

IPC: G11C11/40

CPC classification number: G11C29/50004 ,  G11C11/41 ,  G11C29/12005

Abstract: A threshold voltage measurement device is disclosed. The device is coupled to a 6T SRAM. The SRAM comprises two inverters each coupled to a FET. Power terminals of one inverter are in a floating state; the drain and source of the FET coupled to the inverter are short-circuited. Two voltage selectors, a resistor, an amplifier and the SRAM are connected in a negative feedback way. Different bias voltages are applied to the SRAM for measuring threshold voltages of two FETs of the other inverter and the FET coupled to the other inverter. The present invention uses a single circuit to measure the threshold voltages of the three FETs without changing the physical structure of the SRAM. Thereby is accelerated the measurement and decreased the cost of the fabrication process and measurement instruments.

Abstract translation: 公开了一种阈值电压测量装置。 该器件耦合到6T SRAM。 SRAM包括两个各自耦合到FET的反相器。 一个逆变器的电源端子处于浮动状态; 耦合到逆变器的FET的漏极和源极短路。 两个电压选择器，电阻，放大器和SRAM以负反馈的方式连接。 不同的偏置电压被施加到SRAM，用于测量另一个反相器的两个FET和耦合到另一个反相器的FET的阈值电压。 本发明使用单个电路来测量三个FET的阈值电压，而不改变SRAM的物理结构。 从而加快了测量并降低了制造过程和测量仪器的成本。