- 专利标题： Bulk fin-field effect transistors with well defined isolation
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申请号： US13614885申请日： 2012-09-13
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公开(公告)号： US08604539B2公开(公告)日： 2013-12-10
- 发明人: Kangguo Cheng , Balasubramanian S. Haran , Shom Ponoth , Theodorus E. Standaert , Tenko Yamashita
- 申请人： Kangguo Cheng , Balasubramanian S. Haran , Shom Ponoth , Theodorus E. Standaert , Tenko Yamashita
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Fleit Gibbons Gutman Bongini & Bianco PL
- 代理商 Thomas Grzesik
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119
摘要：
A fin field-effect-transistor fabricated by forming a dummy fin structure on a semiconductor substrate. A dielectric layer is formed on the semiconductor substrate. The dielectric layer surrounds the dummy fin structure. The dummy fin structure is removed to form a cavity within the dielectric layer. The cavity exposes a portion of the semiconductor substrate thereby forming an exposed portion of the semiconductor substrate within the cavity. A dopant is implanted into the exposed portion of the semiconductor substrate within the cavity thereby creating a dopant implanted exposed portion of the semiconductor substrate within the cavity. A semiconductor layer is epitaxially grown within the cavity atop the dopant implanted exposed portion of the semiconductor substrate.
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