发明授权
US08610276B2 Metal cap for back end of line (BEOL) interconnects, design structure and method of manufacture 有权
后端金属盖(BEOL)互连,设计结构和制造方法

Metal cap for back end of line (BEOL) interconnects, design structure and method of manufacture
摘要:
A structure is provided with a metal cap for back end of line (BEOL) interconnects that substantially eliminates electro-migration (EM) damage, a design structure and a method of manufacturing the IC. The structure includes a metal interconnect formed in a dielectric material and a metal cap selective to the metal interconnect. The metal cap includes RuX, where X is at Boron, Phosphorous or a combination of Boron and Phosphorous.
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