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1.发明授权公开(公告)号：US08563419B2
公开(公告)日：2013-10-22
申请号：US13418659
申请日：2012-03-13
IPC分类号： H01L21/4763
CPC分类号： H01L23/5329 , H01L21/76846 , H01L21/76849 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing the IC is provided, and more particularly, a method of fabricating a cap for back end of line (BEOL) interconnects that substantially eliminates electro-migration (EM) damage. The method includes forming an interconnect in an insulation material, and selectively depositing a metal cap material on the interconnect. The metal cap material includes RuX, where X is at least one of Boron and Phosphorous.
摘要翻译： 提供了一种制造IC的方法，更具体地说，涉及一种基本上消除电迁移（EM）损伤的制造用于后端（BEOL）互连的帽的方法。 该方法包括在绝缘材料中形成互连，并且在互连上选择性地沉积金属帽材料。 金属帽材料包括RuX，其中X是硼和磷中的至少一种。
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2.发明授权Metal cap for back end of line (BEOL) interconnects, design structure and method of manufacture 有权后端金属盖（BEOL）互连，设计结构和制造方法公开(公告)号：US08610276B2
公开(公告)日：2013-12-17
申请号：US13474916
申请日：2012-05-18
IPC分类号： H01L23/48
CPC分类号： H01L23/5329 , H01L21/76846 , H01L21/76849 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A structure is provided with a metal cap for back end of line (BEOL) interconnects that substantially eliminates electro-migration (EM) damage, a design structure and a method of manufacturing the IC. The structure includes a metal interconnect formed in a dielectric material and a metal cap selective to the metal interconnect. The metal cap includes RuX, where X is at Boron, Phosphorous or a combination of Boron and Phosphorous.
摘要翻译： 一种结构设置有用于后端线（BEOL）互连的金属盖，其基本上消除了电迁移（EM）损伤，设计结构和制造IC的方法。 该结构包括形成在电介质材料中的金属互连和对金属互连有选择性的金属帽。 金属盖包括RuX，其中X在硼，磷或硼和磷的组合。
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3.发明申请METAL CAP FOR BACK END OF LINE (BEOL) INTERCONNECTS, DESIGN STRUCTURE AND METHOD OF MANUFACTURE 有权线束（BEOL）互连金属盖，设计结构和制造方法公开(公告)号：US20100038783A1
公开(公告)日：2010-02-18
申请号：US12191522
申请日：2008-08-14
IPC分类号： H01L21/768 , H01L23/535 , G06F17/50
CPC分类号： H01L23/5329 , H01L21/76846 , H01L21/76849 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A structure is provided with a metal cap for back end of line (BEOL) interconnects that substantially eliminates electro-migration (EM) damage, a design structure and a method of manufacturing the IC. The structure includes a metal interconnect formed in a dielectric material and a metal cap selective to the metal interconnect. The metal cap includes RuX, where X is at Boron, Phosphorous or a combination of Boron and Phosphorous.
摘要翻译： 一种结构设置有用于后端线（BEOL）互连的金属盖，其基本上消除了电迁移（EM）损伤，设计结构和制造IC的方法。 该结构包括形成在电介质材料中的金属互连和对金属互连有选择性的金属帽。 金属盖包括RuX，其中X在硼，磷或硼和磷的组合。
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公开(公告)号：US08232645B2
公开(公告)日：2012-07-31
申请号：US12191522
申请日：2008-08-14
IPC分类号： H01L23/48
CPC分类号： H01L23/5329 , H01L21/76846 , H01L21/76849 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： An interconnect structure is provided that substantially eliminates electro-migration (EM) damage, a design structure and a method of manufacturing. The metal interconnect is formed in a dielectric material. A metal cap is selective to the metal interconnect. The metal cap includes RuX, where X is at Boron, Phosphorous or a combination of Boron and Phosphorous.
摘要翻译： 提供了一种互连结构，其基本上消除了电迁移（EM）损伤，设计结构和制造方法。 金属互连形成在电介质材料中。 金属盖对金属互连有选择性。 金属盖包括RuX，其中X在硼，磷或硼和磷的组合。
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5.发明申请公开(公告)号：US20120228770A1
公开(公告)日：2012-09-13
申请号：US13474916
申请日：2012-05-18
IPC分类号： H01L23/482 , B82Y99/00
CPC分类号： H01L23/5329 , H01L21/76846 , H01L21/76849 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A structure is provided with a metal cap for back end of line (BEOL) interconnects that substantially eliminates electro-migration (EM) damage, a design structure and a method of manufacturing the IC. The structure includes a metal interconnect formed in a dielectric material and a metal cap selective to the metal interconnect. The metal cap includes RuX, where X is at Boron, Phosphorous or a combination of Boron and Phosphorous.
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6.发明申请METAL CAP FOR BACK END OF LINE (BEOL) INTERCONNECTS, DESIGN STRUCTURE AND METHOD OF MANUFACTURE 有权线束（BEOL）互连金属盖，设计结构和制造方法公开(公告)号：US20120171860A1
公开(公告)日：2012-07-05
申请号：US13418659
申请日：2012-03-13
IPC分类号： H01L21/768
CPC分类号： H01L23/5329 , H01L21/76846 , H01L21/76849 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A structure is provided with a metal cap for back end of line (BEOL) interconnects that substantially eliminates electro-migration (EM) damage, a design structure and a method of manufacturing the IC. The structure includes a metal interconnect formed in a dielectric material and a metal cap selective to the metal interconnect. The metal cap includes RuX, where X is at Boron, Phosphorous or a combination of Boron and Phosphorous.
摘要翻译： 一种结构设置有用于后端线（BEOL）互连的金属盖，其基本上消除了电迁移（EM）损伤，设计结构和制造IC的方法。 该结构包括形成在电介质材料中的金属互连和对金属互连有选择性的金属帽。 金属盖包括RuX，其中X在硼，磷或硼和磷的组合。
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公开(公告)号：US08120179B2
公开(公告)日：2012-02-21
申请号：US12615354
申请日：2009-11-10
申请人： Kaushik Chanda , Cathryn J. Christiansen , Daniel C. Edelstein , Satyanarayana V. Nitta , Son V. Nguyen , Shom Ponoth , Hosadurga Shobha
发明人： Kaushik Chanda , Cathryn J. Christiansen , Daniel C. Edelstein , Satyanarayana V. Nitta , Son V. Nguyen , Shom Ponoth , Hosadurga Shobha
CPC分类号： H01L23/5222 , H01L21/7682 , H01L21/76834 , H01L21/76849 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A metal interconnect structure includes at least a pair of metal lines, a cavity therebetween, and a dielectric metal-diffusion barrier layer located on at least one portion of walls of the cavity. After formation of a cavity between the pair of metal lines, the dielectric metal-diffusion barrier layer is formed on the exposed surfaces of the cavity. A dielectric material layer is formed above the pair of metal lines to encapsulate the cavity. The dielectric metal-diffusion barrier layer prevents diffusion of metal and impurities from one metal line to another metal line and vice versa, thereby preventing electrical shorts between the pair of metal lines.
摘要翻译： 金属互连结构包括至少一对金属线，它们之间的腔，以及位于腔的至少一部分壁上的介电金属扩散阻挡层。 在一对金属线之间形成空腔之后，在空腔的暴露表面上形成介电金属扩散阻挡层。 在一对金属线之上形成介电材料层以封装空腔。 电介质金属扩散阻挡层防止金属和杂质从一个金属线扩散到另一个金属线，反之亦然，从而防止一对金属线之间的电短路。
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公开(公告)号：US20110108992A1
公开(公告)日：2011-05-12
申请号：US12615354
申请日：2009-11-10
申请人： Kaushik Chanda , Cathryn J. Christiansen , Daniel C. Edelstein , Satyanarayana V. Nitta , Son V. Nguyen , Shom Ponoth , Hosadurga Shobha
发明人： Kaushik Chanda , Cathryn J. Christiansen , Daniel C. Edelstein , Satyanarayana V. Nitta , Son V. Nguyen , Shom Ponoth , Hosadurga Shobha
IPC分类号： H01L23/522 , H01L21/768
CPC分类号： H01L23/5222 , H01L21/7682 , H01L21/76834 , H01L21/76849 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A metal interconnect structure includes at least a pair of metal lines, a cavity therebetween, and a dielectric metal-diffusion barrier layer located on at least one portion of walls of the cavity. After formation of a cavity between the pair of metal lines, the dielectric metal-diffusion barrier layer is formed on the exposed surfaces of the cavity. A dielectric material layer is formed above the pair of metal lines to encapsulate the cavity. The dielectric metal-diffusion barrier layer prevents diffusion of metal and impurities from one metal line to another metal line and vice versa, thereby preventing electrical shorts between the pair of metal lines.
摘要翻译： 金属互连结构包括至少一对金属线，它们之间的腔，以及位于腔的至少一部分壁上的介电金属扩散阻挡层。 在一对金属线之间形成空腔之后，在空腔的暴露表面上形成介电金属扩散阻挡层。 在一对金属线之上形成介电材料层以封装空腔。 电介质金属扩散阻挡层防止金属和杂质从一个金属线扩散到另一个金属线，反之亦然，从而防止一对金属线之间的电短路。
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公开(公告)号：US08383507B2
公开(公告)日：2013-02-26
申请号：US13351370
申请日：2012-01-17
申请人： Kaushik Chanda , Cathryn J. Christiansen , Daniel C. Edelstein , Satyanarayana V. Nitta , Son V. Nguyen , Shom Ponoth , Hosadurga Shobha
发明人： Kaushik Chanda , Cathryn J. Christiansen , Daniel C. Edelstein , Satyanarayana V. Nitta , Son V. Nguyen , Shom Ponoth , Hosadurga Shobha
IPC分类号： H01L21/4763 , H01L23/48
CPC分类号： H01L23/5222 , H01L21/7682 , H01L21/76834 , H01L21/76849 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A metal interconnect structure includes at least a pair of metal lines, a cavity therebetween, and a dielectric metal-diffusion barrier layer located on at least one portion of walls of the cavity. After formation of a cavity between the pair of metal lines, the dielectric metal-diffusion barrier layer is formed on the exposed surfaces of the cavity. A dielectric material layer is formed above the pair of metal lines to encapsulate the cavity. The dielectric metal-diffusion barrier layer prevents diffusion of metal and impurities from one metal line to another metal line and vice versa, thereby preventing electrical shorts between the pair of metal lines.
摘要翻译： 金属互连结构包括至少一对金属线，它们之间的腔，以及位于腔的至少一部分壁上的介电金属扩散阻挡层。 在一对金属线之间形成空腔之后，在空腔的暴露表面上形成介电金属扩散阻挡层。 在一对金属线之上形成介电材料层以封装空腔。 电介质金属扩散阻挡层防止金属和杂质从一个金属线扩散到另一个金属线，反之亦然，从而防止一对金属线之间的电短路。
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公开(公告)号：US20110108990A1
公开(公告)日：2011-05-12
申请号：US12613551
申请日：2009-11-06
申请人： Griselda Bonilla , Kaushik Chanda , Ronald G. Filippi , Stephan Grunow , David L. Rath , Sujatha Sankaran , Andrew H. Simon , Theodorus E. Standaert , Chih-Chao Yang
发明人： Griselda Bonilla , Kaushik Chanda , Ronald G. Filippi , Stephan Grunow , David L. Rath , Sujatha Sankaran , Andrew H. Simon , Theodorus E. Standaert , Chih-Chao Yang
IPC分类号： H01L23/532 , H01L21/768
CPC分类号： H01L23/53238 , H01L21/76834 , H01L21/76849 , H01L21/76865 , H01L2924/0002 , H01L2924/00
摘要： A method for capping lines includes forming a metal film layer on a copper line by a selective deposition process, the copper line disposed in a dielectric substrate, wherein the depositing also results in the deposition of stray metal material on the surface of the dielectric substrate, and etching with an isotropic etching process to remove a portion of the metal film layer and the stray metal material on the surface of the dielectric substrate, wherein the metal film layer is deposited at an initial thickness sufficient to leave a metal film layer cap remaining on the copper line following the removal of the stray metal material.
摘要翻译： 一种封盖线的方法包括通过选择性沉积工艺在铜线上形成金属膜层，铜线设置在电介质基底中，其中沉积还导致杂散金属材料沉积在介质基片的表面上， 并用各向同性蚀刻工艺进行蚀刻以除去电介质基底表面上的金属膜层和杂散金属材料的一部分，其中金属膜层以足以使金属膜层盖保持在其上的初始厚度沉积 铜线除去杂散金属材料。
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