发明授权
- 专利标题： Variable write back timing to nonvolatile semiconductor memory
- 专利标题（中）： 可变写回定时到非易失性半导体存储器
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申请号： US13052203申请日： 2011-03-21
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公开(公告)号： US08612692B2公开(公告)日： 2013-12-17
- 发明人: Kenta Yasufuku , Masaki Miyagawa , Goh Uemura , Tsutomu Owa , Tsutomu Unesaki , Atsushi Kunimatsu
- 申请人： Kenta Yasufuku , Masaki Miyagawa , Goh Uemura , Tsutomu Owa , Tsutomu Unesaki , Atsushi Kunimatsu
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2010-172758 20100730
- 主分类号： G06F12/12
- IPC分类号： G06F12/12
摘要：
According to one embodiment, an information processing device includes a first determination section and a setting section. The first determination section determines inconsistency between first data and second data. The first data is stored in a nonvolatile semiconductor memory. The second data is corresponding to the first data and stored in a semiconductor memory. The setting section sets execution timing of write back based on access frequency information associated with the second data.
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