发明授权
US08617961B1 Post-gate isolation area formation for fin field effect transistor device
有权
鳍状场效应晶体管器件的栅极间隔离区域形成
- 专利标题： Post-gate isolation area formation for fin field effect transistor device
- 专利标题（中）： 鳍状场效应晶体管器件的栅极间隔离区域形成
-
申请号： US13551659申请日： 2012-07-18
-
公开(公告)号： US08617961B1公开(公告)日： 2013-12-31
- 发明人: Balasubramanian S. Haran , Sanjay Mehta , Theodorus E. Standaert
- 申请人： Balasubramanian S. Haran , Sanjay Mehta , Theodorus E. Standaert
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Cantor Colburn LLP
- 代理商 Matthew Zehrer
- 主分类号： H01L21/76
- IPC分类号： H01L21/76
摘要：
A method for fin field effect transistor (finFET) device formation includes forming a plurality of fins on a substrate; forming a gate region over the plurality of fins; and forming isolation areas for the finFET device after formation of the gate region, wherein forming the isolation areas for the finFET device comprises performing one of oxidation or removal of a subset of the plurality of fins.
公开/授权文献
信息查询
IPC分类:
