发明授权
- 专利标题： Substantially L-shaped silicide for contact
- 专利标题（中）： 基本上L型硅化物进行接触
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申请号： US12182212申请日： 2008-07-30
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公开(公告)号： US08643119B2公开(公告)日： 2014-02-04
- 发明人: Zhijiong Luo , Huilong Zhu , Yung Fu Chong , Hung Y. Ng , Kern Rim , Nivo Rovedo
- 申请人： Zhijiong Luo , Huilong Zhu , Yung Fu Chong , Hung Y. Ng , Kern Rim , Nivo Rovedo
- 申请人地址： US NY Armonk SG Singapore
- 专利权人： International Business Machines Corporation,Chartered Semiconductor Manufacturing LTD
- 当前专利权人： International Business Machines Corporation,Chartered Semiconductor Manufacturing LTD
- 当前专利权人地址： US NY Armonk SG Singapore
- 代理机构： Hoffman Warnick LLC
- 代理商 Yuanmin Cai
- 主分类号： H01L29/76
- IPC分类号： H01L29/76
摘要：
A structure for a semiconductor device, according to an embodiment, includes: a substantially L-shaped silicide element including a base member and an extended member, wherein the base member extends at least partially into a shallow trench isolation (STI) region such that a substantially horizontal surface of the base member directly contacts a substantially horizontal surface of the STI region; and a contact contacting the substantially L-shaped silicide element.