发明授权
- 专利标题: Film deposition method
- 专利标题(中): 膜沉积法
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申请号: US13189648申请日: 2011-07-25
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公开(公告)号: US08658247B2公开(公告)日: 2014-02-25
- 发明人: Toshiyuki Ikeuchi , Pao-Hwa Chou , Kazuya Yamamoto , Kentaro Sera
- 申请人: Toshiyuki Ikeuchi , Pao-Hwa Chou , Kazuya Yamamoto , Kentaro Sera
- 申请人地址: JP Tokyo
- 专利权人: Tokyo Electron Limited
- 当前专利权人: Tokyo Electron Limited
- 当前专利权人地址: JP Tokyo
- 代理机构: IPUSA, PLLC
- 优先权: JP2010-170758 20100729; JP2011-105146 20110510
- 主分类号: C23C16/40
- IPC分类号: C23C16/40
摘要:
A disclosed film deposition method comprises alternately repeating an adsorption step and a reaction step with an interval period therebetween. The adsorption step includes opening a first on-off valve of a source gas supplying system for a predetermined time period thereby to supply a source gas to a process chamber, closing the first valve after the predetermined time period elapses, and confining the source gas within the process tube, thereby allowing the source gas to be adsorbed on an object to be processed, while a third on-off valve of a vacuum evacuation system is closed. The reaction step includes opening a second on-off valve of a reaction gas supplying system thereby to supply a reaction gas to the process chamber, thereby allowing the source gas and the reaction gas to react with each other thereby to produce a thin film on the object to be processed.
公开/授权文献
- US20120190215A1 FILM DEPOSITION METHOD AND FILM DEPOSITION APPARATUS 公开/授权日:2012-07-26