公开(公告)号：US08658247B2

公开(公告)日：2014-02-25

申请号：US13189648

申请日：2011-07-25

申请人： Toshiyuki Ikeuchi ,  Pao-Hwa Chou ,  Kazuya Yamamoto ,  Kentaro Sera

发明人： Toshiyuki Ikeuchi ,  Pao-Hwa Chou ,  Kazuya Yamamoto ,  Kentaro Sera

IPC分类号： C23C16/40

CPC分类号： H01L21/0228 ,  C23C16/401 ,  C23C16/45546 ,  C23C16/45557 ,  H01L21/02164 ,  H01L21/02219

摘要： A disclosed film deposition method comprises alternately repeating an adsorption step and a reaction step with an interval period therebetween. The adsorption step includes opening a first on-off valve of a source gas supplying system for a predetermined time period thereby to supply a source gas to a process chamber, closing the first valve after the predetermined time period elapses, and confining the source gas within the process tube, thereby allowing the source gas to be adsorbed on an object to be processed, while a third on-off valve of a vacuum evacuation system is closed. The reaction step includes opening a second on-off valve of a reaction gas supplying system thereby to supply a reaction gas to the process chamber, thereby allowing the source gas and the reaction gas to react with each other thereby to produce a thin film on the object to be processed.

摘要翻译： 所公开的膜沉积方法包括以间隔期交替地重复吸附步骤和反应步骤。 吸附步骤包括打开源气体供应系统的第一开关阀预定时间段，从而将源气体供应到处理室，在经过预定时间段之后关闭第一阀门，并将源气体限制在 处理管，从而允许源气体被吸附在待处理物体上，而真空排气系统的第三开关阀关闭。 反应步骤包括打开反应气体供应系统的第二开关阀，从而将反应气体提供给处理室，从而使源气体和反应气体彼此反应，从而在其上产生薄膜 对象被处理。

公开(公告)号：US08642486B2

公开(公告)日：2014-02-04

申请号：US13337743

申请日：2011-12-27

申请人： Toshiyuki Ikeuchi ,  Pao-Hwa Chou ,  Kazuya Yamamoto ,  Kentarou Sera

发明人： Toshiyuki Ikeuchi ,  Pao-Hwa Chou ,  Kazuya Yamamoto ,  Kentarou Sera

IPC分类号： H01L21/31

CPC分类号： C23C16/52 ,  C23C16/402 ,  C23C16/45546 ,  C23C16/46 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/0228 ,  H01L21/67109 ,  H01L21/67248

摘要： A control unit heats a reaction pipe to a load temperature by controlling a temperature-raising heater 16, and then makes semiconductor wafers received in the reaction pipe. Next, the control unit heats the reaction pipe in which the semiconductor wafers are received to a film formation temperature by controlling the temperature-raising heater, and then forms thin films on the semiconductor wafers by supplying a film forming gas into the reaction pipe from a process gas introducing pipe. Also, the control unit sets the load temperature to a temperature higher than the film formation temperature.

摘要翻译： 控制单元通过控制升温加热器16将反应管加热到负载温度，然后使半导体晶片接收在反应管中。 接下来，控制单元通过控制升温加热器将接收半导体晶片的反应管加热成膜温度，然后在半导体晶片上通过从反应管中提供成膜气体而形成薄膜 工艺气体导入管。 此外，控制单元将负载温度设定为高于成膜温度的温度。

公开(公告)号：US07926445B2

公开(公告)日：2011-04-19

申请号：US11898366

申请日：2007-09-11

申请人： Keisuke Suzuki ,  Toshiyuki Ikeuchi ,  Kimiya Aoki

发明人： Keisuke Suzuki ,  Toshiyuki Ikeuchi ,  Kimiya Aoki

IPC分类号： C23C16/00 ,  C23C16/455

CPC分类号： C23C8/12 ,  C23C8/16 ,  H01L21/02164 ,  H01L21/0223 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/31662

摘要： An oxidizing method for an object to be processed according to the present invention includes: an arranging step of arranging a plurality of objects to be processed in a processing container whose inside can be vacuumed, the processing container having a predetermined length, a main supplying unit of an oxidative gas and a supplying unit of a reducing gas being provided at one end of the processing container, a sub supplying unit of the oxidative gas being provided on a way in a longitudinal direction of the processing container; an atmosphere forming step of supplying the oxidative gas and the reducing gas into the processing container in order to form an atmosphere having active oxygen species and active hydroxyl species in the processing container; and an oxidizing step of oxidizing surfaces of the plurality of objects to be processed in the atmosphere. In the atmosphere forming step, the oxidative gas is adapted to be supplied from the main supplying unit of the oxidative gas and the sub supplying unit of the oxidative gas.

摘要翻译： 根据本发明的被处理物的氧化方法包括：排列步骤，将待处理的多个物体排列在可以被抽真空的处理容器内，处理容器具有预定长度，主供应单元 在所述处理容器的一端设置有氧化性气体和还原气体供给单元，所述氧化性气体的副供给单元设置在所述处理容器的长度方向上; 将氧化性气体和还原性气体供给到处理容器中以在处理容器中形成具有活性氧和活性羟基的气氛的气氛形成工序; 以及在大气中氧化多个待处理物体的表面的氧化步骤。 在气氛形成工序中，氧化气体适于从氧化气体的主供给单元和氧化气体的副供给单元供给。

公开(公告)号：US20050272269A1

公开(公告)日：2005-12-08

申请号：US11086671

申请日：2005-03-23

申请人： Keisuke Suzuki ,  Toshiyuki Ikeuchi ,  Kimiya Aoki

发明人： Keisuke Suzuki ,  Toshiyuki Ikeuchi ,  Kimiya Aoki

IPC分类号： H01L21/31 ,  C23C8/12 ,  C23C8/16 ,  C23C16/00 ,  H01L21/316 ,  H01L21/469

CPC分类号： C23C8/12 ,  C23C8/16 ,  H01L21/02164 ,  H01L21/0223 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/31662

摘要： An oxidizing method for an object to be processed according to the present invention includes: an arranging step of arranging a plurality of objects to be processed in a processing container whose inside can be vacuumed, the processing container having a predetermined length, a main supplying unit of an oxidative gas and a supplying unit of a reducing gas being provided at one end of the processing container, a sub supplying unit of the oxidative gas being provided on a way in a longitudinal direction of the processing container; an atmosphere forming step of supplying the oxidative gas and the reducing gas into the processing container in order to form an atmosphere having active oxygen species and active hydroxyl species in the processing container; and an oxidizing step of oxidizing surfaces of the plurality of objects to be processed in the atmosphere. In the atmosphere forming step, the oxidative gas is adapted to be supplied from the main supplying unit of the oxidative gas and the sub supplying unit of the oxidative gas.

摘要翻译： 根据本发明的被处理物的氧化方法包括：排列步骤，将待处理的多个物体排列在可以被抽真空的处理容器内，处理容器具有预定长度，主供应单元 在所述处理容器的一端设置有氧化性气体和还原气体供给单元，所述氧化性气体的副供给单元设置在所述处理容器的长度方向上; 将氧化性气体和还原性气体供给到处理容器中以在处理容器中形成具有活性氧和活性羟基的气氛的气氛形成工序; 以及在大气中氧化多个待处理物体的表面的氧化步骤。 在气氛形成工序中，氧化气体适于从氧化气体的主供给单元和氧化气体的副供给单元供给。

公开(公告)号：US08461059B2

公开(公告)日：2013-06-11

申请号：US12838911

申请日：2010-07-19

申请人： Toshiyuki Ikeuchi ,  Masayuki Hasegawa ,  Toshihiko Takahashi ,  Keisuke Suzuki

发明人： Toshiyuki Ikeuchi ,  Masayuki Hasegawa ,  Toshihiko Takahashi ,  Keisuke Suzuki

IPC分类号： H01L21/473

CPC分类号： C23C16/402 ,  C23C16/45525 ,  C23C16/45557 ,  H01L21/02164 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/31608

摘要： A batch CVD method repeats a cycle including adsorption and reaction steps along with a step of removing residual gas. The adsorption step is preformed while supplying the source gas into the process container by first setting the source gas valve open for a first period and then setting the source gas valve closed, without supplying the reactive gas into the process container by keeping the reactive gas valve closed, and without exhausting gas from inside the process container by keeping the exhaust valve closed. The reaction step is performed without supplying the source gas into the process container by keeping the source gas valve closed, while supplying the reactive gas into the process container by setting the reactive gas valve open, and exhausting gas from inside the process container by setting the exhaust valve to gradually decrease its valve opening degree from a predetermined open state.

摘要翻译： 分批CVD法重复包括吸附和反应步骤的循环以及除去残余气体的步骤。 通过首先将源气体阀开启第一时间段，然后将源气体阀关闭而将源气体供应到处理容器中，同时将原料气体供给到处理容器中，同时通过保持反应气体阀 关闭，并且不通过保持排气阀关闭从处理容器内部排出气体。 通过将源气体阀保持关闭，同时通过将反应性气体阀打开而将反应性气体供给到处理容器中，并且通过将处理容器内的气体排出到处理容器内部来排出气体，从而进行反应步骤， 排气阀从预定的打开状态逐渐减小阀开度。

公开(公告)号：US20110021033A1

公开(公告)日：2011-01-27

申请号：US12838911

申请日：2010-07-19

申请人： Toshiyuki Ikeuchi ,  Masayuki Hasegawa ,  Toshihiko Takahashi ,  Keisuke Suzuki

发明人： Toshiyuki Ikeuchi ,  Masayuki Hasegawa ,  Toshihiko Takahashi ,  Keisuke Suzuki

IPC分类号： H01L21/46

CPC分类号： C23C16/402 ,  C23C16/45525 ,  C23C16/45557 ,  H01L21/02164 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/31608

摘要： A batch CVD method repeats a cycle including adsorption and reaction steps along with a step of removing residual gas. The adsorption step is preformed while supplying the source gas into the process container by first setting the source gas valve open for a first period and then setting the source gas valve closed, without supplying the reactive gas into the process container by keeping the reactive gas valve closed, and without exhausting gas from inside the process container by keeping the exhaust valve closed. The reaction step is performed without supplying the source gas into the process container by keeping the source gas valve closed, while supplying the reactive gas into the process container by setting the reactive gas valve open, and exhausting gas from inside the process container by setting the exhaust valve to gradually decrease its valve opening degree from a predetermined open state.

摘要翻译： 分批CVD法重复包括吸附和反应步骤的循环以及除去残余气体的步骤。 通过首先将源气体阀开启第一时间段，然后将源气体阀关闭而将源气体供应到处理容器中，同时将原料气体供给到处理容器中，同时通过保持反应气体阀 关闭，并且不通过保持排气阀关闭从处理容器内部排出气体。 通过将源气体阀保持关闭，同时通过将反应性气体阀打开而将反应性气体供给到处理容器中，并且通过将处理容器内的气体排出到处理容器内部来排出气体，进行反应步骤， 排气阀从预定的打开状态逐渐减小阀开度。

公开(公告)号：US07674724B2

公开(公告)日：2010-03-09

申请号：US12213784

申请日：2008-06-24

申请人： Keisuke Suzuki ,  Toshiyuki Ikeuchi ,  Kota Umezawa

发明人： Keisuke Suzuki ,  Toshiyuki Ikeuchi ,  Kota Umezawa

IPC分类号： H01L21/469

CPC分类号： H01L21/67017 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/31662 ,  H01L21/67757

摘要： An oxidizing method for an object to be processed according to the present invention includes: an arranging step of arranging a plurality of objects to be processed in a processing container whose inside can be vacuumed, the processing container having a predetermined length, a supplying unit of an oxidative gas being provided at one end of the processing container, a plurality of supplying units of a reducing gas being provided at a plurality of positions in a longitudinal direction of the processing container; an atmosphere forming step of supplying the oxidative gas and the reducing gas into the processing container in order to form an atmosphere having active oxygen species and active hydroxyl species in the processing container; and an oxidizing step of oxidizing surfaces of the plurality of objects to be processed in the atmosphere. The atmosphere forming step has: a selecting step of selecting a predetermined supplying unit of a reducing gas among the plurality of supplying units of a reducing gas, based on an arrangement number and respective arrangement positions of the plurality of objects to be processed in the processing container; an oxidative-gas supplying step of supplying the oxidative gas into the processing container by means of the supplying unit of an oxidative gas; and an reducing-gas supplying step of supplying the reducing gas into the processing container by means of only the supplying unit of a reducing gas selected by the selecting step.

摘要翻译： 根据本发明的待处理物体的氧化方法包括：排列步骤，将待处理的多个物体布置在可以被抽真空的处理容器中，处理容器具有预定长度，供应单元 在处理容器的一端设有氧化性气体，在处理容器的长度方向的多个位置设有多个还原气体供给单元， 将氧化性气体和还原性气体供给到处理容器中以在处理容器中形成具有活性氧和活性羟基的气氛的气氛形成工序; 以及在大气中氧化多个待处理物体的表面的氧化步骤。 气氛形成步骤具有：选择步骤，基于在处理中的待处理的多个物体的排列数和各个排列位置，选择还原气体的多个供给单元中的还原气体的规定供给单元 容器; 氧化气体供给步骤，通过氧化性气体供给单元将氧化性气体供给到处理容器内; 以及还原气体供给工序，通过仅由所述选择工序所选择的还原气体的供给部供给所述还原气体到所述处理容器。

公开(公告)号：US07625604B2

公开(公告)日：2009-12-01

申请号：US10523803

申请日：2003-08-08

申请人： Keisuke Suzuki ,  Wenling Wang ,  Tsukasa Yonekawa ,  Toshiyuki Ikeuchi ,  Toru Sato

发明人： Keisuke Suzuki ,  Wenling Wang ,  Tsukasa Yonekawa ,  Toshiyuki Ikeuchi ,  Toru Sato

IPC分类号： C23C16/00

CPC分类号： H01L21/67253 ,  C23C16/46 ,  C23C16/52 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/31662 ,  H01L21/67109 ,  H01L21/67248 ,  H01L22/20 ,  Y10T436/25

摘要： The present invention relates to a thermal processing method includes a first thermal processing step that carries out thermal processing steps using a plurality of first substrates, wherein thin films are formed on surfaces of the plurality of first substrates by means of less consumption of the process gas than on surfaces of production substrates. Then, a second thermal processing step carries out thermal processing steps by using a plurality of second substrates, wherein thin films are formed on surfaces of the plurality of second substrates by means of more consumption of the process gas than on the surfaces of the plurality of first substrates, and wherein heating units are respectively adjusted to respective temperature set values set during the previous step. Then, a third thermal processing step carries out thermal processing steps by using production substrates as the plurality of substrates, wherein the plurality of heating units are respectively adjusted to the respective temperature set values corrected during the previous step.

摘要翻译： 热处理方法技术领域本发明涉及一种热处理方法，其包括使用多个第一基板进行热处理步骤的第一热处理步骤，其中通过较少的处理气体的消耗在多个第一基板的表面上形成薄膜 比生产基板的表面。 然后，第二热处理步骤通过使用多个第二基板进行热处理步骤，其中通过更多的处理气体的消耗而在多个第二基板的表面上形成薄膜，而不是在多个第二基板的表面上形成薄膜 第一基板，并且其中加热单元分别被调整到在前一步骤期间设置的相应温度设定值。 然后，第三热处理步骤通过使用生产基板作为多个基板来进行热处理步骤，其中多个加热单元分别被调整到在前一步骤期间校正的各个温度设定值。

公开(公告)号：US20080200038A1

公开(公告)日：2008-08-21

申请号：US12068452

申请日：2008-02-06

申请人： Toshiyuki Ikeuchi ,  Kota Umezawa ,  Tetsuya Shibata

发明人： Toshiyuki Ikeuchi ,  Kota Umezawa ,  Tetsuya Shibata

IPC分类号： H01L21/316 ,  C23C16/44 ,  B05C11/00

CPC分类号： C23C8/34 ,  C23C8/12 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/3145 ,  H01L21/31662

摘要： A heat processing method for a semiconductor process includes placing a plurality of target substrates stacked at intervals in a vertical direction within a process field of a process container. Each of the target substrates includes a process object layer on its surface. Then, the method includes supplying an oxidizing gas and a deoxidizing gas to the process field while heating the process field, thereby causing the oxidizing gas and the deoxidizing gas to react with each other to generate oxygen radicals and hydroxyl group radicals, and performing oxidation on the process object layer of the target substrates by use of the oxygen radicals and the hydroxyl group radicals. Then, the method includes heating the process object layer processed by the oxidation, within an atmosphere of an annealing gas containing ozone or oxidizing radicals, thereby performing annealing on the process object layer.

摘要翻译： 用于半导体工艺的热处理方法包括在处理容器的处理区域内放置沿垂直方向间隔堆叠的多个目标衬底。 目标基板中的每一个在其表面上包括处理对象层。 然后，该方法包括在加工过程场的同时向工艺场提供氧化气体和脱氧气体，从而使氧化气体和脱氧气体彼此反应以产生氧自由基和羟基自由基，并进行氧化 通过使用氧自由基和羟基自由基的目标底物的工艺对象层。 然后，该方法包括在含有臭氧或氧化自由基的退火气体的气氛中加热由氧化处理的工艺物体层，从而对加工对象层进行退火。

公开(公告)号：US07304003B2

公开(公告)日：2007-12-04

申请号：US11086671

申请日：2005-03-23

申请人： Keisuke Suzuki ,  Toshiyuki Ikeuchi ,  Kimiya Aoki

发明人： Keisuke Suzuki ,  Toshiyuki Ikeuchi ,  Kimiya Aoki

IPC分类号： H01L21/31

CPC分类号： C23C8/12 ,  C23C8/16 ,  H01L21/02164 ,  H01L21/0223 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/31662

摘要： An oxidizing method for an object to be processed according to the present invention includes: an arranging step of arranging a plurality of objects to be processed in a processing container whose inside can be vacuumed, the processing container having a predetermined length, a main supplying unit of an oxidative gas and a supplying unit of a reducing gas being provided at one end of the processing container, a sub supplying unit of the oxidative gas being provided on a way in a longitudinal direction of the processing container; an atmosphere forming step of supplying the oxidative gas and the reducing gas into the processing container in order to form an atmosphere having active oxygen species and active hydroxyl species in the processing container; and an oxidizing step of oxidizing surfaces of the plurality of objects to be processed in the atmosphere. In the atmosphere forming step, the oxidative gas is adapted to be supplied from the main supplying unit of the oxidative gas and the sub supplying unit of the oxidative gas.

摘要翻译： 根据本发明的被处理物的氧化方法包括：排列步骤，将待处理的多个物体排列在可以被抽真空的处理容器内，处理容器具有预定长度，主供应单元 在所述处理容器的一端设置有氧化性气体和还原气体供给单元，所述氧化性气体的副供给单元设置在所述处理容器的长度方向上; 将氧化性气体和还原性气体供给到处理容器中以在处理容器中形成具有活性氧和活性羟基的气氛的气氛形成工序; 以及在大气中氧化多个待处理物体的表面的氧化步骤。 在气氛形成工序中，氧化气体适于从氧化气体的主供给单元和氧化气体的副供给单元供给。