Invention Grant
- Patent Title: Electronic device with a gate electrode having at least two portions
- Patent Title (中): 具有至少两部分的栅电极的电子器件
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Application No.: US12639394Application Date: 2009-12-16
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Publication No.: US08659087B2Publication Date: 2014-02-25
- Inventor: Olubunmi O. Adetutu , Tien Ying Luo , Narayanan C. Ramani
- Applicant: Olubunmi O. Adetutu , Tien Ying Luo , Narayanan C. Ramani
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113
Abstract:
A transistor structure of an electronic device can include a gate dielectric layer and a gate electrode. The gate electrode can have a surface portion between the gate dielectric layer and the rest of the gate electrode. The surface portion can be formed such that another portion of the gate electrode primarily sets the effective work function in the finished transistor structure.
Public/Granted literature
- US20100090287A1 ELECTRONIC DEVICE WITH A GATE ELECTRODE HAVING AT LEAST TWO PORTIONS Public/Granted day:2010-04-15
Information query
IPC分类:
