发明授权
- 专利标题: Power transistor with high voltage counter implant
- 专利标题(中): 功率晶体管与高压计数器植入
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申请号: US13554880申请日: 2012-07-20
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公开(公告)号: US08673712B2公开(公告)日: 2014-03-18
- 发明人: Shih-Kuang Hsiao , Chen-Liang Chu , Yi-Sheng Chen , Fei-Yuh Chen , Kong-Beng Thei
- 申请人: Shih-Kuang Hsiao , Chen-Liang Chu , Yi-Sheng Chen , Fei-Yuh Chen , Kong-Beng Thei
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Slater & Matsil, L.L.P.
- 主分类号: H01L21/8238
- IPC分类号: H01L21/8238 ; H01L21/336 ; H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119
摘要:
Presented herein is a field effect transistor device, optionally a lateral power transistor, and a method for forming the same, comprising providing a substrate, creating a doped buried layer, and creating a primary well in the substrate on the buried layer. A drift drain may be created in the primary well and a counter implant region implanted in the primary well and between the drift drain and the buried layer. The primary well may comprise a first and second implant region with the second implant region at a depth less than the first. The counter implant may be at a depth between the first and second implant regions. The primary well and counter implant region may comprise dopants of the same conductivity type, or both p+-type dopants. A gate may be formed over a portion of a drift drain.
公开/授权文献
- US20140021539A1 Power Transistor with High Voltage Counter Implant 公开/授权日:2014-01-23