发明授权
US08673787B2 Method to reduce charge buildup during high aspect ratio contact etch
有权
在高纵横比接触蚀刻期间减少电荷积累的方法
- 专利标题: Method to reduce charge buildup during high aspect ratio contact etch
- 专利标题(中): 在高纵横比接触蚀刻期间减少电荷积累的方法
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申请号: US13164970申请日: 2011-06-21
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公开(公告)号: US08673787B2公开(公告)日: 2014-03-18
- 发明人: Gurtej S. Sandhu , Max F. Hineman , Daniel A. Steckert , Jingyi Bai , Shane J. Trapp , Tony Schrock
- 申请人: Gurtej S. Sandhu , Max F. Hineman , Daniel A. Steckert , Jingyi Bai , Shane J. Trapp , Tony Schrock
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Wells St. John, P.S.
- 主分类号: H01L21/302
- IPC分类号: H01L21/302
摘要:
A method of high aspect ratio contact etching a substantially vertical contact hole in an oxide layer using a hard photoresist mask is described. The oxide layer is deposited on an underlying substrate. A plasma etching gas is formed from a carbon source gas. Dopants are mixed into the gas. The doped plasma etching gas etches a substantially vertical contact hole through the oxide layer by doping carbon chain polymers formed along the sidewalls of the contact holes during the etching process into a conductive state. The conductive state of the carbon chain polymers reduces the charge buildup along sidewalls to prevent twisting of the contact holes by bleeding off the charge and ensuring proper alignment with active area landing regions. The etching stops at the underlying substrate.