公开(公告)号：US08673787B2

公开(公告)日：2014-03-18

申请号：US13164970

申请日：2011-06-21

申请人： Gurtej S. Sandhu ,  Max F. Hineman ,  Daniel A. Steckert ,  Jingyi Bai ,  Shane J. Trapp ,  Tony Schrock

发明人： Gurtej S. Sandhu ,  Max F. Hineman ,  Daniel A. Steckert ,  Jingyi Bai ,  Shane J. Trapp ,  Tony Schrock

IPC分类号： H01L21/302

CPC分类号： H01L21/76802 ,  H01L21/31116 ,  Y10S438/906

摘要： A method of high aspect ratio contact etching a substantially vertical contact hole in an oxide layer using a hard photoresist mask is described. The oxide layer is deposited on an underlying substrate. A plasma etching gas is formed from a carbon source gas. Dopants are mixed into the gas. The doped plasma etching gas etches a substantially vertical contact hole through the oxide layer by doping carbon chain polymers formed along the sidewalls of the contact holes during the etching process into a conductive state. The conductive state of the carbon chain polymers reduces the charge buildup along sidewalls to prevent twisting of the contact holes by bleeding off the charge and ensuring proper alignment with active area landing regions. The etching stops at the underlying substrate.

摘要翻译： 描述了使用硬光致抗蚀剂掩模的高纵横比接触蚀刻氧化物层中的基本上垂直的接触孔的方法。 氧化物层沉积在下面的衬底上。 由碳源气体形成等离子体蚀刻气体。 掺杂剂混入气体中。 掺杂的等离子体蚀刻气体通过将在蚀刻过程中沿着接触孔的侧壁形成的碳链聚合物掺杂到导电状态来蚀刻通过氧化物层的基本垂直的接触孔。 碳链聚合物的导电状态减少了沿着侧壁的电荷累积，以防止通过渗出电荷并确保与有源区着陆区域的适当对准来接合孔的扭曲。 蚀刻停止在下面的基底。

公开(公告)号：US07344975B2

公开(公告)日：2008-03-18

申请号：US11213283

申请日：2005-08-26

申请人： Gurtej S. Sandhu ,  Max F. Hineman ,  Daniel A. Steckert ,  Jingyi Bai ,  Shane J. Trapp ,  Tony Schrock

发明人： Gurtej S. Sandhu ,  Max F. Hineman ,  Daniel A. Steckert ,  Jingyi Bai ,  Shane J. Trapp ,  Tony Schrock

IPC分类号： H01L21/4763

CPC分类号： H01L21/76802 ,  H01L21/31116 ,  Y10S438/906

摘要： A method of high aspect ratio contact etching a substantially vertical contact hole in an oxide layer using a hard photoresist mask is described. The oxide layer is deposited on an underlying substrate. A plasma etching gas is formed from a carbon source gas. Dopants are mixed into the gas. The doped plasma etching gas etches a substantially vertical contact hole through the oxide layer by doping carbon chain polymers formed along the sidewalls of the contact holes during the etching process into a conductive state. The conductive state of the carbon chain polymers reduces the charge buildup along sidewalls to prevent twisting of the contact holes by bleeding off the charge and ensuring proper alignment with active area landing regions. The etching stops at the underlying substrate.

摘要翻译： 描述了使用硬光致抗蚀剂掩模的高纵横比接触蚀刻氧化物层中的基本上垂直的接触孔的方法。 氧化物层沉积在下面的衬底上。 由碳源气体形成等离子体蚀刻气体。 掺杂剂混入气体中。 掺杂的等离子体蚀刻气体通过在蚀刻工艺期间将沿着接触孔的侧壁形成的碳链聚合物掺杂到导电状态来蚀刻通过氧化物层的基本垂直的接触孔。 碳链聚合物的导电状态减少了沿着侧壁的电荷累积，以防止通过渗出电荷并确保与有源区着陆区域的适当对准来接合孔的扭曲。 蚀刻停止在下面的基底。

公开(公告)号：US20110250759A1

公开(公告)日：2011-10-13

申请号：US13164970

申请日：2011-06-21

申请人： Gurtej S. Sandhu ,  Max F. Hineman ,  Daniel A. Steckert ,  Jingyi Bai ,  Shane J. Trapp ,  Tony Schrock

发明人： Gurtej S. Sandhu ,  Max F. Hineman ,  Daniel A. Steckert ,  Jingyi Bai ,  Shane J. Trapp ,  Tony Schrock

IPC分类号： H01L21/3065

CPC分类号： H01L21/76802 ,  H01L21/31116 ,  Y10S438/906

摘要： A method of high aspect ratio contact etching a substantially vertical contact hole in an oxide layer using a hard photoresist mask is described. The oxide layer is deposited on an underlying substrate. A plasma etching gas is formed from a carbon source gas. Dopants are mixed into the gas. The doped plasma etching gas etches a substantially vertical contact hole through the oxide layer by doping carbon chain polymers formed along the sidewalls of the contact holes during the etching process into a conductive state. The conductive state of the carbon chain polymers reduces the charge buildup along sidewalls to prevent twisting of the contact holes by bleeding off the charge and ensuring proper alignment with active area landing regions. The etching stops at the underlying substrate.

摘要翻译： 描述了使用硬光致抗蚀剂掩模的高纵横比接触蚀刻氧化物层中的基本上垂直的接触孔的方法。 氧化物层沉积在下面的衬底上。 由碳源气体形成等离子体蚀刻气体。 掺杂剂混入气体中。 掺杂的等离子体蚀刻气体通过在蚀刻工艺期间将沿着接触孔的侧壁形成的碳链聚合物掺杂到导电状态来蚀刻通过氧化物层的基本垂直的接触孔。 碳链聚合物的导电状态减少了沿着侧壁的电荷累积，以防止通过渗出电荷并确保与有源区着陆区域的适当对准来接合孔的扭曲。 蚀刻停止在下面的基底。

公开(公告)号：US07985692B2

公开(公告)日：2011-07-26

申请号：US12018254

申请日：2008-01-23

申请人： Gurtej S. Sandhu ,  Max F. Hineman ,  Daniel A. Steckert ,  Jingyi Bai ,  Shane J. Trapp ,  Tony Schrock

发明人： Gurtej S. Sandhu ,  Max F. Hineman ,  Daniel A. Steckert ,  Jingyi Bai ,  Shane J. Trapp ,  Tony Schrock

IPC分类号： H01L21/302

CPC分类号： H01L21/76802 ,  H01L21/31116 ,  Y10S438/906

摘要： A method of high aspect ratio contact etching a substantially vertical contact hole in an oxide layer using a hard photoresist mask is described. The oxide layer is deposited on an underlying substrate. A plasma etching gas is formed from a carbon source gas. Dopants are mixed into the gas. The doped plasma etching gas etches a substantially vertical contact hole through the oxide layer by doping carbon chain polymers formed along the sidewalls of the contact holes during the etching process into a conductive state. The conductive state of the carbon chain polymers reduces the charge buildup along sidewalls to prevent twisting of the contact holes by bleeding off the charge and ensuring proper alignment with active area landing regions. The etching stops at the underlying substrate.

摘要翻译： 描述了使用硬光致抗蚀剂掩模的高纵横比接触蚀刻氧化物层中的基本上垂直的接触孔的方法。 氧化物层沉积在下面的衬底上。 由碳源气体形成等离子体蚀刻气体。 掺杂剂混入气体中。 掺杂的等离子体蚀刻气体通过在蚀刻工艺期间将沿着接触孔的侧壁形成的碳链聚合物掺杂到导电状态来蚀刻通过氧化物层的基本垂直的接触孔。 碳链聚合物的导电状态减少了沿着侧壁的电荷累积，以防止通过渗出电荷并确保与有源区着陆区域的适当对准来接合孔的扭曲。 蚀刻停止在下面的基底。

公开(公告)号：US20080128389A1

公开(公告)日：2008-06-05

申请号：US12018254

申请日：2008-01-23

申请人： Gurtej S. Sandhu ,  Max F. Hineman ,  Daniel A. Steckert ,  Jingyi Bai ,  Shane J. Trapp ,  Tony Schrock

发明人： Gurtej S. Sandhu ,  Max F. Hineman ,  Daniel A. Steckert ,  Jingyi Bai ,  Shane J. Trapp ,  Tony Schrock

IPC分类号： B44C1/22

CPC分类号： H01L21/76802 ,  H01L21/31116 ,  Y10S438/906

摘要： A method of high aspect ratio contact etching a substantially vertical contact hole in an oxide layer using a hard photoresist mask is described. The oxide layer is deposited on an underlying substrate. A plasma etching gas is formed from a carbon source gas. Dopants are mixed into the gas. The doped plasma etching gas etches a substantially vertical contact hole through the oxide layer by doping carbon chain polymers formed along the sidewalls of the contact holes during the etching process into a conductive state. The conductive state of the carbon chain polymers reduces the charge buildup along sidewalls to prevent twisting of the contact holes by bleeding off the charge and ensuring proper alignment with active area landing regions. The etching stops at the underlying substrate.

摘要翻译： 描述了使用硬光致抗蚀剂掩模的高纵横比接触蚀刻氧化物层中的基本上垂直的接触孔的方法。 氧化物层沉积在下面的衬底上。 由碳源气体形成等离子体蚀刻气体。 掺杂剂混入气体中。 掺杂的等离子体蚀刻气体通过在蚀刻工艺期间将沿着接触孔的侧壁形成的碳链聚合物掺杂到导电状态来蚀刻通过氧化物层的基本垂直的接触孔。 碳链聚合物的导电状态减少了沿着侧壁的电荷累积，以防止通过渗出电荷并确保与有源区着陆区域的适当对准来接合孔的扭曲。 蚀刻停止在下面的基底。

公开(公告)号：US5879975A

公开(公告)日：1999-03-09

申请号：US924322

申请日：1997-09-05

申请人： Olov Karlsson ,  Effiong Ibok ,  Dong-Hyuk Ju ,  Scott A. Bell ,  Daniel A. Steckert ,  Robert Ogle

发明人： Olov Karlsson ,  Effiong Ibok ,  Dong-Hyuk Ju ,  Scott A. Bell ,  Daniel A. Steckert ,  Robert Ogle

IPC分类号： H01L21/28 ,  H01L21/3213 ,  H01L21/00

CPC分类号： H01L21/28035 ,  H01L21/32137

摘要： The etch profile of side surfaces of a gate electrode is improved by heat treating the gate electrode layer after nitrogen implantation and before etching to form the gate electrode. Nitrogen implantation at high dosages to prevent subsequent impurity penetration through the gate dielectric layer, e.g., B penetration, amorphizes the upper portion of the gate electrode layer resulting in concave side surfaces upon etching to form the gate electrode. Heat treatment performed after nitrogen implantation can restore sufficient crystallinity so that, after etching the gate electrode layer, the side surfaces of the resulting gate electrode are substantially parallel.

摘要翻译： 通过在氮气注入之后和蚀刻之前对栅电极层进行热处理以形成栅电极来改善栅电极侧表面的蚀刻轮廓。 高剂量的氮注入以防止随后的杂质穿过栅极电介质层（例如B渗透），使蚀刻后的栅极电极层的上部非晶化，形成凹面侧以形成栅电极。 在氮气注入之后进行的热处理可以恢复足够的结晶度，使得在蚀刻栅极电极层之后，所得栅电极的侧表面基本上平行。