发明授权
- 专利标题: Reducing substrate warpage in semiconductor processing
- 专利标题(中): 降低半导体加工中的基板翘曲
-
申请号: US13349323申请日: 2012-01-12
-
公开(公告)号: US08691706B2公开(公告)日: 2014-04-08
- 发明人: Chen-Hua Yu , Wen-Chih Chiou , Fang Wen Tsai , Kuang-Wei Cheng , Jiann Sheng Chang , Yi Chou Lai , Jiung Wu
- 申请人: Chen-Hua Yu , Wen-Chih Chiou , Fang Wen Tsai , Kuang-Wei Cheng , Jiann Sheng Chang , Yi Chou Lai , Jiung Wu
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Slater & Matsil, L.L.P.
- 主分类号: H01L21/02
- IPC分类号: H01L21/02
摘要:
System and method for reducing substrate warpage in a thermal process. An embodiment comprises pre-heating a substrate in a loadlock chamber before performing the thermal process of the substrate. After the thermal process, the substrate is cooled down in a loadlock chamber. The pre-heat and cool-down process reduces the warpage of the substrate caused by the differences in coefficients of thermal expansion (CTEs) of the materials that make up the substrate.
公开/授权文献
- US20130183831A1 Reducing Substrate Warpage in Semiconductor Processing 公开/授权日:2013-07-18
信息查询
IPC分类: