发明授权
- 专利标题： Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device
- 专利标题（中）： 用于硅介电膜的蚀刻后处理剂，半导体器件的制造方法以及半导体器件
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申请号： US12560193申请日： 2009-09-15
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公开(公告)号： US08716209B2公开(公告)日： 2014-05-06
- 发明人: Yasushi Kobayashi , Kouta Yoshikawa , Yoshihiro Nakata , Tadahiro Imada , Shirou Ozaki
- 申请人： Yasushi Kobayashi , Kouta Yoshikawa , Yoshihiro Nakata , Tadahiro Imada , Shirou Ozaki
- 申请人地址： JP Kawasaki
- 专利权人： Fujitsu Limited
- 当前专利权人： Fujitsu Limited
- 当前专利权人地址： JP Kawasaki
- 代理机构： Westerman, Hattori, Daniels & Adrian, LLP
- 主分类号： H01L21/306
- IPC分类号： H01L21/306 ; C11D11/00 ; H01L21/3105
摘要：
The invention provides an agent for post-etch treating a silicon dielectric film, including: at least one nitrogen-containing substance selected from the group consisting of ammonium bases and amine compounds; an acid; and at least one silicon-containing compound containing silicon, carbon and hydrogen. According to the present invention, it becomes possible to suppress an increase in the dielectric constant of a silicon dielectric film caused by etching.
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