发明授权
- 专利标题： Adaptively programming or erasing flash memory blocks
- 专利标题（中）： 自适应地编程或擦除闪存块
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申请号： US13437324申请日： 2012-04-02
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公开(公告)号： US08724388B2公开(公告)日： 2014-05-13
- 发明人: Tio Wei Neo , Shivananda Shetty , James Pak
- 申请人： Tio Wei Neo , Shivananda Shetty , James Pak
- 申请人地址： US CA Sunnyvale
- 专利权人： Spansion LLC
- 当前专利权人： Spansion LLC
- 当前专利权人地址： US CA Sunnyvale
- 代理机构： Sterne, Kessler, Goldstein & Fox P.L.L.C.
- 主分类号： G11C11/34
- IPC分类号： G11C11/34 ; G11C16/10 ; G11C11/56
摘要：
Embodiments described herein generally relate to programming and erasing a FLASH memory. In an embodiment, a method of programming or erasing the contents of a block of a FLASH memory includes determining a voltage of a pulse based on an age of the block and outputting the pulse to at least a portion of the block. The pulse is used to program or erase the block.
公开/授权文献
- US20130258775A1 Adaptively Programming or Erasing Flash Memory Blocks 公开/授权日：2013-10-03
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