发明授权
US08729664B2 Discontinuous guard ring 有权
不连续的护环

Discontinuous guard ring
摘要:
An integrated circuit chip comprising a guard ring formed on a semiconductor substrate that surrounds the active region of the integrated circuit chip and extends from the semiconductor substrate through one or more of a plurality of wiring levels. The guard ring comprises stacked metal lines with spaces breaking up each respective metal line. Each space may be formed such that it partially overlies the space in the metal line directly below but does not overlie any other space. Alternatively, each space may also be formed such that each space is at least completely overlying the space in the metal line below it.
公开/授权文献
信息查询
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件;其他类目中不包括的电固体器件(使用半导体器件的测量入G01;一般电阻器入H01C;磁体、电感器、变压器入H01F;一般电容器入H01G;电解型器件入H01G9/00;电池组、蓄电池入H01M;波导管、谐振器或波导型线路入H01P;线路连接器、汇流器入H01R;受激发射器件入H01S;机电谐振器入H03H;扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R;一般电光源入H05B;印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K;在具有特殊应用的电路中使用的半导体器件见应用相关的小类)
H01L29/00 专门适用于整流、放大、振荡或切换,并具有至少一个电位跃变势垒或表面势垒的半导体器件;具有至少一个电位跃变势垒或表面势垒,例如PN结耗尽层或载流子集结层的电容器或电阻器;半导体本体或其电极的零部件(H01L31/00至H01L47/00,H01L51/05优先;除半导体或其电极之外的零部件入H01L23/00;由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00)
H01L29/02 .按其半导体本体的特征区分的
H01L29/12 ..按其构成材料的特征区分的
H01L29/15 ... · ·带有周期性或准周期性电势变化的结构,如多量子阱、超晶格(应用于光控制的这种结构入G02F1/017;应用于半导体激光器的入H01S5/34)
0/0