发明授权
- 专利标题: Forming structures on resistive substrates
- 专利标题(中): 在电阻基板上形成结构
-
申请号: US13312442申请日: 2011-12-06
-
公开(公告)号: US08735986B2公开(公告)日: 2014-05-27
- 发明人: Alan B. Botula , Renata Camillo-Castillo , James S. Dunn , Jeffrey P. Gambino , Douglas B. Hershberger , Alvin J. Joseph , Robert M. Rassel , Mark E. Stidham
- 申请人: Alan B. Botula , Renata Camillo-Castillo , James S. Dunn , Jeffrey P. Gambino , Douglas B. Hershberger , Alvin J. Joseph , Robert M. Rassel , Mark E. Stidham
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Cantor Colburn LLP
- 代理商 Michael LeStrange
- 主分类号: H01L27/12
- IPC分类号: H01L27/12
摘要:
A substrate includes a first region having a first resistivity, for optimizing a field effect transistor, a second region having a second resistivity, for optimizing an npn subcollector of a bipolar transistor device and triple well, a third region having a third resistivity, with a high resistivity for a passive device, a fourth region, substantially without implantation, to provide low perimeter capacitance for devices.
公开/授权文献
- US20130140668A1 Forming Structures on Resistive Substrates 公开/授权日:2013-06-06