Invention Grant
US08736064B2 Structure and method of making interconnect element having metal traces embedded in surface of dielectric
有权
制造互连元件的结构和方法，其具有嵌入在电介质表面中的金属迹线
- Patent Title: Structure and method of making interconnect element having metal traces embedded in surface of dielectric
- Patent Title (中): 制造互连元件的结构和方法，其具有嵌入在电介质表面中的金属迹线
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Application No.: US12941511Application Date: 2010-11-08
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Publication No.: US08736064B2Publication Date: 2014-05-27
- Inventor: Hideki Kotake , Kiyoshi Hyodo , Inetaro Kurosawa , Yukio Hashimoto , Toku Yoshino , Tomoo Iijima
- Applicant: Hideki Kotake , Kiyoshi Hyodo , Inetaro Kurosawa , Yukio Hashimoto , Toku Yoshino , Tomoo Iijima
- Applicant Address: US CA San Jose
- Assignee: Invensas Corporation
- Current Assignee: Invensas Corporation
- Current Assignee Address: US CA San Jose
- Agency: Lerner, David, Littenberg, Krumholz & Mentlik, LLP
- Priority: JP2005-15970 20050124
- Main IPC: H01L23/522
- IPC: H01L23/522
Abstract:
An interconnect element is provided. A monolithic dielectric element has a first exposed major surface, a plurality of first recesses extending inwardly from the first major surface, and a second exposed major surface remote from the first major surface, a plurality of second recesses extending inwardly from the second major surface. A plurality of first metal interconnect patterns are embedded in the plurality of first recesses and extend in one or more directions along the first major surface. A plurality of second metal interconnect patterns are embedded in the plurality of second recesses and extend in one or more directions along the second major surface. A plurality of non-hollow metal posts extend through the dielectric element between at least some of the plurality of first metal interconnect patterns and at least some of the plurality of second metal interconnect patterns.
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