摘要:
An interconnect element is provided. A monolithic dielectric element has a first exposed major surface, a plurality of first recesses extending inwardly from the first major surface, and a second exposed major surface remote from the first major surface, a plurality of second recesses extending inwardly from the second major surface. A plurality of first metal interconnect patterns are embedded in the plurality of first recesses and extend in one or more directions along the first major surface. A plurality of second metal interconnect patterns are embedded in the plurality of second recesses and extend in one or more directions along the second major surface. A plurality of non-hollow metal posts extend through the dielectric element between at least some of the plurality of first metal interconnect patterns and at least some of the plurality of second metal interconnect patterns.
摘要:
A process for manufacturing a multilayer wiring board including the steps of forming an insulating layer on a base provided with a bump for interlayer connection, bonding a copper foil onto the insulating layer by a thermocompression bonding by sandwiching the copper foil between stainless steel plates, and patterning the copper foil, in which a metal foil is interposed at least between each of the stainless plates and the copper foil at the time of the thermocompression bonding. At this time, a mold release layer is formed on a surface of the metal foil to be imposed. Thus, such a multilayer wiring board can be manufactured that prevents sticking of a product after molding (cementing of the copper foil) and excels in dimensional stability without occurrence of wrinkling and ruggedness.
摘要:
A method of making a microelectronic element includes making a connection component by providing a metal layer having a top surface and a bottom surface, providing a dielectric layer over the top surface of the metal layer and forming openings in the dielectric layer to expose portions of the top surface of the metal layer. The method includes providing conductive elements atop the dielectric layer, at least some of the conductive elements extending through the openings in the dielectric layer and being in contact with the metal layer, and plating first conductive protrusions atop the at least some of the conductive elements extending through the openings in the dielectric layer, the first conductive protrusions extending away from the metal layer. The method includes selectively removing portions of the metal layer from the bottom surface of the metal layer to form second conductive protrusions that extend away from the first conductive protrusions. At least some of the first and second conductive protrusions are electrically interconnected with one another.
摘要:
To increase the dimensional accuracy of an interlayer member used for producing a multilayer wiring board which is inserted between two wiring layers to establish interlayer insulation and interlayer electrical connection between the wiring layers, to thereby increase a layout density. A mask film is formed on a main surface of a sheet-like carrier layer. A metal column for interlayer connection is formed on the main surface of the carrier layer by plating a copper using the mask film as a mask. The mask film is removed. An interlayer insulating layer and a protective sheet are laminated on the main surface of the carrier layer in such a manner that the metal column for interlayer connection penetrates them. The interlayer insulating layer and the protective sheet are polished until the upper surface of the metal column for interlayer connection is exposed. Then, the carrier layer is removed. Furthermore, the protective sheet is removed.
摘要:
The present invention prepares a member having a conductor-circuit-forming copper foil 21 formed on a protrusion-forming copper layer 23 via an etching-barrier layer 22 formed of a different metal. Etching is selectively performed for the protrusion-forming copper foil 21 by using etchant that does not etch the etching-barrier layer, and protrusions 25 are thereby formed. Then, the etching-barrier layer 22 is removed using etchant that does not etch the copper foil 23 and using the protrusions as masks. An interlayer-insulating layer 27 is formed on a surface of the copper foil 23, on which the protrusions 25 are formed, so that the protrusions are connected to the conductor circuit. Thereby, heights of the protrusions are uniformed, and the reliability of connections can be improved.
摘要:
By adopting an electrolytic plating method in forming the bump, the drawbacks of the conventional electrolytic plating method should be avoided. For example, the necessity of adopting a lead wiring for each wiring or the like should be eliminated. On the surface of a metal base, a resist film (first resist film) having a negative pattern for forming a wiring film and a resist film (second resist film) having a negative pattern for forming the bump or the pad is formed. By using these films as masks, electrolyic plating of a bump material film is conducted to form the bump. Subsequently, after only the second film is removed. By using the first resist film as a mask, electrolytic plating is then conducted to form a wiring film.
摘要:
A method of making a microelectronic assembly includes providing a conductive metal layer having a first surface and a second surface, and etching the first surface of the conductive metal layer to form conductive protrusions, whereby after the etching step, the second surface of the conductive metal layer defines a substantially flat, continuous surface. The method includes juxtaposing a layer of an insulating material with tips of the conductive protrusions, and pressing the conductive protrusions through the layer of an insulating material so that the tips of the conductive protrusions are accessible at a first surface of the layer of an insulating material. In certain embodiments, the method may include after the pressing step, etching the second surface of the conductive metal layer to form conductive traces that are electrically interconnected with the conductive protrusions. The layer of an insulating material may be heated before the pressing step so as to soften the layer of an insulating material during the pressing step. The layer of an insulating material may be cooled to an ambient temperature after the pressing step. A microelectronic element, such as a semiconductor chip, is electrically interconnected with said conductive protrusions. The microelectronic assembly may also be electrically interconnected with a microelectronic structure having one or more layers, such as a multi-level microelectronic structure.
摘要:
A plurality of multi-layer metal plates (1) each being composed of a bump forming metal layer (2), an etching stop layer (3), and a wiring film forming metal layer (4), and in which a wiring film (4a) is formed from the wiring film forming metal layer and a bump 2a is formed from the bump forming metal layer are prepared, and on a bump forming surface of a multi-layer metal plate, a wiring film of another multi-layer metal plate is overlapped. Such lamination process is repeated in succession for multi-layering. In addition, a polishing machine for multi-layer wiring board (11a) which includes metal plate holding means (13) for holding a metal plate (1a), cutter holding means (25) for holding a cutter (26) above the metal plate, height adjustment mechanism (20) for adjusting the height of the cutter holding means, and cutter parallel moving mechanism (15) for relatively moving the cutter holding means in parallel to the surface of the metal plate is used to conduct polishing.
摘要:
The present invention relates to a method for fabricating a wiring substrate by forming an insulating film on a metal base having openings on the metal base at positions corresponding to metal bumps to be formed later; forming at least one layer of wiring on the base made of a metal through the insulating film, the layer of wiring having a wring film formed thereon by electroplating; and selectively etching the base. The insulating film can be a liquid photosensitive polyamide, the wiring layer can be copper and the wiring film can be a conductive layer selected from the group consisting of Ni-P and Ni. In the present invention, the wiring layer can be formed through the insulating film in contact with the metal base at the openings in the insulating film and in contact with the insulating film where there are no openings in the insulating film.
摘要:
By adopting an electrolytic plating method in forming the bump, the drawbacks of the conventional electrolytic plating method should be avoided. For example, the necessity of adopting a lead wiring for each wiring or the like should be eliminated. On the surface of a metal base, a resist film (first resist film) having a negative pattern for forming a wiring film and a resist film (second resist film) having a negative pattern for forming the bump or the pad is formed. By using these films as masks, electrolytic plating of a bump material film is conducted to form the bump. Subsequently, after only the second film is removed. By using the first resist film as a mask, electrolytic plating is then conducted to form a wiring film.