Fabrication method of wiring substrate for mounting semiconductor element and semiconductor device
    6.
    发明授权
    Fabrication method of wiring substrate for mounting semiconductor element and semiconductor device 有权
    用于安装半导体元件和半导体器件的布线基板的制造方法

    公开(公告)号:US06372620B1

    公开(公告)日:2002-04-16

    申请号:US09253441

    申请日:1999-02-19

    IPC分类号: H01L2144

    摘要: By adopting an electrolytic plating method in forming the bump, the drawbacks of the conventional electrolytic plating method should be avoided. For example, the necessity of adopting a lead wiring for each wiring or the like should be eliminated. On the surface of a metal base, a resist film (first resist film) having a negative pattern for forming a wiring film and a resist film (second resist film) having a negative pattern for forming the bump or the pad is formed. By using these films as masks, electrolyic plating of a bump material film is conducted to form the bump. Subsequently, after only the second film is removed. By using the first resist film as a mask, electrolytic plating is then conducted to form a wiring film.

    摘要翻译: 通过在形成凸块时采用电解电镀方法,应避免常规电解电镀方法的缺点。 例如,应该消除对每个布线等采用引线的必要性。 在金属基体的表面上,形成具有用于形成布线膜的负图案的抗蚀剂膜(第一抗蚀剂膜)和具有用于形成凸块或焊盘的负图案的抗蚀剂膜(第二抗蚀剂膜)。 通过使用这些膜作为掩模,进行凸块材料膜的电镀以形成凸块。 随后,仅仅第二个膜被去除之后。 通过使用第一抗蚀剂膜作为掩模,然后进行电镀以形成布线膜。

    Methods of making microelectronic assemblies
    7.
    发明申请
    Methods of making microelectronic assemblies 有权
    制造微电子组件的方法

    公开(公告)号:US20070209199A1

    公开(公告)日:2007-09-13

    申请号:US11784810

    申请日:2007-04-10

    IPC分类号: H05K3/36

    摘要: A method of making a microelectronic assembly includes providing a conductive metal layer having a first surface and a second surface, and etching the first surface of the conductive metal layer to form conductive protrusions, whereby after the etching step, the second surface of the conductive metal layer defines a substantially flat, continuous surface. The method includes juxtaposing a layer of an insulating material with tips of the conductive protrusions, and pressing the conductive protrusions through the layer of an insulating material so that the tips of the conductive protrusions are accessible at a first surface of the layer of an insulating material. In certain embodiments, the method may include after the pressing step, etching the second surface of the conductive metal layer to form conductive traces that are electrically interconnected with the conductive protrusions. The layer of an insulating material may be heated before the pressing step so as to soften the layer of an insulating material during the pressing step. The layer of an insulating material may be cooled to an ambient temperature after the pressing step. A microelectronic element, such as a semiconductor chip, is electrically interconnected with said conductive protrusions. The microelectronic assembly may also be electrically interconnected with a microelectronic structure having one or more layers, such as a multi-level microelectronic structure.

    摘要翻译: 制造微电子组件的方法包括提供具有第一表面和第二表面的导电金属层,并且蚀刻导电金属层的第一表面以形成导电突起,由此在蚀刻步骤之后,导电金属的第二表面 层限定基本平坦的连续表面。 该方法包括将绝缘材料层与导电突起的尖端并置,并且通过绝缘材料层压住导电突起,使得导电突起的顶端在绝缘材料层的第一表面可接近 。 在某些实施例中,该方法可以包括在压制步骤之后,蚀刻导电金属层的第二表面以形成与导电突起电互连的导电迹线。 可以在压制步骤之前加热绝缘材料层,以在压制步骤期间软化绝缘材料层。 在压制步骤之后,可以将绝缘材料层冷却至环境温度。 诸如半导体芯片的微电子元件与所述导电突起电互连。 微电子组件也可以与具有一层或多层的微电子结构电互连,例如多级微电子结构。

    Fabrication method of wiring substrate for mounting semiconductor element and semiconductor device
    10.
    发明授权
    Fabrication method of wiring substrate for mounting semiconductor element and semiconductor device 失效
    用于安装半导体元件和半导体器件的布线基板的制造方法

    公开(公告)号:US06617236B2

    公开(公告)日:2003-09-09

    申请号:US10072351

    申请日:2002-02-07

    IPC分类号: H01L2144

    摘要: By adopting an electrolytic plating method in forming the bump, the drawbacks of the conventional electrolytic plating method should be avoided. For example, the necessity of adopting a lead wiring for each wiring or the like should be eliminated. On the surface of a metal base, a resist film (first resist film) having a negative pattern for forming a wiring film and a resist film (second resist film) having a negative pattern for forming the bump or the pad is formed. By using these films as masks, electrolytic plating of a bump material film is conducted to form the bump. Subsequently, after only the second film is removed. By using the first resist film as a mask, electrolytic plating is then conducted to form a wiring film.

    摘要翻译: 通过在形成凸块时采用电解电镀方法,应避免常规电解电镀方法的缺点。 例如,应该消除对每个布线等采用引线的必要性。 在金属基体的表面上,形成具有用于形成布线膜的负图案的抗蚀剂膜(第一抗蚀剂膜)和具有用于形成凸块或焊盘的负图案的抗蚀剂膜(第二抗蚀剂膜)。 通过使用这些膜作为掩模,进行凸块材料膜的电解电镀以形成凸块。 随后,仅仅第二个膜被去除之后。 通过使用第一抗蚀剂膜作为掩模,然后进行电镀以形成布线膜。