发明授权
- 专利标题： Semiconductor device comprising an isolation trench including semiconductor islands
- 专利标题（中）： 半导体器件包括包括半导体岛的隔离沟槽
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申请号： US13321867申请日： 2009-05-22
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公开(公告)号： US08759942B2公开(公告)日： 2014-06-24
- 发明人: Alexander Hoelke , Deb Kumar Pal , Pei Shan Chua , Gopalakrishnan Kulathu Sankar , Kia Yaw Kee , Yang Hao , Uta Kuniss
- 申请人： Alexander Hoelke , Deb Kumar Pal , Pei Shan Chua , Gopalakrishnan Kulathu Sankar , Kia Yaw Kee , Yang Hao , Uta Kuniss
- 申请人地址： DE Erfurt
- 专利权人： X-FAB Semiconductor Foundries AG
- 当前专利权人： X-FAB Semiconductor Foundries AG
- 当前专利权人地址： DE Erfurt
- 代理机构： Stevens & Showalter LLP
- 国际申请： PCT/IB2009/052160 WO 20090522
- 国际公布： WO2010/133923 WO 20101125
- 主分类号： H01L21/70
- IPC分类号： H01L21/70 ; H01L21/76 ; H01L29/40 ; H01L29/861
摘要：
The present invention provides semiconductor devices and methods for fabricating the same, in which superior dielectric termination of drift regions is accomplished by a plurality of intersecting trenches with intermediate semiconductor islands. Thus, a deep trench arrangement can be achieved without being restricted by the overall width of the isolation structure.
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