发明授权
- 专利标题： Dark current reduction for back side illuminated image sensor
- 专利标题（中）： 背面照明图像传感器的暗电流降低
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申请号： US13305069申请日： 2011-11-28
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公开(公告)号： US08772895B2公开(公告)日： 2014-07-08
- 发明人: Shou-Shu Lu , Hsun-Ying Huang , Hsin-Jung Huang , Chun-Mao Chiu , Chia-Chi Hsiao , Yung-Cheng Chang
- 申请人： Shou-Shu Lu , Hsun-Ying Huang , Hsin-Jung Huang , Chun-Mao Chiu , Chia-Chi Hsiao , Yung-Cheng Chang
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L27/146
- IPC分类号： H01L27/146 ; H01L31/0232 ; H01L31/18
摘要：
Provided is a semiconductor image sensor device that includes a non-scribe-line region and a scribe-line region. The image sensor device includes a first substrate portion disposed in the non-scribe-line region. The first substrate portion contains a doped radiation-sensing region. The image sensor device includes a second substrate portion disposed in the scribe-line region. The second substrate portion has the same material composition as the first substrate portion. Also provided is a method of fabricating an image sensor device. The method includes forming a plurality of radiation-sensing regions in a substrate. The radiation-sensing regions are formed in a non-scribe-line region of the image sensor device. The method includes forming an opening in a scribe-line region of the image sensor device by etching the substrate in the scribe-line region. A portion of the substrate remains in the scribe-line region after the etching. The method includes filling the opening with an organic material.
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