公开(公告)号：US08697472B2

公开(公告)日：2014-04-15

申请号：US13295145

申请日：2011-11-14

申请人： Wei-Chih Weng ,  Hsun-Ying Huang ,  Yung-Cheng Chang ,  Jin-Hong Cho

发明人： Wei-Chih Weng ,  Hsun-Ying Huang ,  Yung-Cheng Chang ,  Jin-Hong Cho

IPC分类号： H01L21/00 ,  H01L31/102

CPC分类号： H01L27/14623 ,  H01L27/1462 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14685

摘要： Provided is a semiconductor image sensor device. The image sensor device includes a semiconductor substrate that includes an array region and a black level correction region. The array region contains a plurality of radiation-sensitive pixels. The black level correction region contains one or more reference pixels. The substrate has a front side and a back side. The image sensor device includes a first compressively-stressed layer formed on the back side of the substrate. The first compressively-stressed layer contains silicon nitride. The image sensor device includes a metal shield formed on the compressively-stressed layer. The metal shield is formed over at least a portion of the black level correction region. The image sensor device includes a second compressively-stressed layer formed on the metal shield and the first compressively-stressed layer. The second compressively-stressed layer contains silicon oxide. A sidewall of the metal shield is protected by the second compressively-stressed layer.

摘要翻译： 提供了一种半导体图像传感器装置。 图像传感器装置包括具有阵列区域和黑色电平校正区域的半导体衬底。 阵列区域包含多个辐射敏感像素。 黑色电平校正区域包含一个或多个参考像素。 基板具有前侧和后侧。 图像传感器装置包括形成在基板的背面上的第一压缩应力层。 第一压应力层含有氮化硅。 图像传感器装置包括形成在压缩应力层上的金属屏蔽。 金属屏蔽形成在黑色电平校正区域的至少一部分上。 图像传感器装置包括形成在金属屏蔽和第一压缩应力层上的第二压缩应力层。 第二压应力层含有氧化硅。 金属屏蔽的侧壁由第二压应力层保护。

公开(公告)号：US08466530B2

公开(公告)日：2013-06-18

申请号：US13174073

申请日：2011-06-30

申请人： Cheng-Tsung Chen ,  Hsun-Ying Huang ,  Yung-Cheng Chang ,  Yung-Fu Yeh ,  Yu-Ping Chen ,  Chi-Yuan Liang ,  Shou Shu Lu ,  Juan-Lin Chen ,  Jia-Ren Chen ,  Horng-Daw Shen ,  Chi-Hsun Hsieh

发明人： Cheng-Tsung Chen ,  Hsun-Ying Huang ,  Yung-Cheng Chang ,  Yung-Fu Yeh ,  Yu-Ping Chen ,  Chi-Yuan Liang ,  Shou Shu Lu ,  Juan-Lin Chen ,  Jia-Ren Chen ,  Horng-Daw Shen ,  Chi-Hsun Hsieh

IPC分类号： H01L31/0232

CPC分类号： H01L31/02325 ,  H01L27/1461 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14689 ,  H01L31/0248

摘要： A system and method for image sensing is disclosed. An embodiment comprises a substrate with a pixel region, the substrate having a front side and a backside. A co-implant process is performed along the backside of the substrate opposing a photosensitive element positioned along the front side of the substrate. The co-implant process utilizes a first pre-amorphization implant process that creates a pre-amorphization region. A dopant is then implanted wherein the pre-amorphization region retards or reduces the diffusion or tailing of the dopants into the photosensitive region. An anti-reflective layer, a color filter, and a microlens may also be formed over the co-implant region.

摘要翻译： 公开了一种用于图像感测的系统和方法。 实施例包括具有像素区域的基板，该基板具有正面和背面。 沿着基板的背面与沿着基板的前侧定位的感光元件相对地进行共注入工艺。 共同植入工艺利用产生前非晶化区域的第一预非晶化植入工艺。 然后注入掺杂剂，其中预非晶化区域延迟或减少掺杂剂进入感光区域的扩散或拖尾。 还可以在共植入区域上形成抗反射层，滤色器和微透镜。

公开(公告)号：US20130082342A1

公开(公告)日：2013-04-04

申请号：US13249591

申请日：2011-09-30

申请人： Shou Shu Lu ,  Hsun-Ying Huang ,  I-Chang Lin ,  Chia-Chi Hsiao ,  Yung-Cheng Chang

发明人： Shou Shu Lu ,  Hsun-Ying Huang ,  I-Chang Lin ,  Chia-Chi Hsiao ,  Yung-Cheng Chang

IPC分类号： H01L31/0232

CPC分类号： H01L27/14621 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14687

摘要： The present disclosure provides an image sensor device and a method of forming the image sensor device. In an example, a method includes providing a substrate having a first surface and a second surface, the first surface being opposite the second surface; forming a light sensing region at the first surface of the substrate; forming a doped layer at the second surface of the substrate; and after forming the doped layer, polishing the second surface of the substrate.

摘要翻译： 本公开提供了一种图像传感器装置和形成图像传感器装置的方法。 在一个示例中，一种方法包括提供具有第一表面和第二表面的基底，第一表面与第二表面相对; 在所述基板的所述第一表面处形成光感测区域; 在所述衬底的第二表面处形成掺杂层; 并且在形成掺杂层之后，研磨衬底的第二表面。

公开(公告)号：US08772895B2

公开(公告)日：2014-07-08

申请号：US13305069

申请日：2011-11-28

申请人： Shou-Shu Lu ,  Hsun-Ying Huang ,  Hsin-Jung Huang ,  Chun-Mao Chiu ,  Chia-Chi Hsiao ,  Yung-Cheng Chang

发明人： Shou-Shu Lu ,  Hsun-Ying Huang ,  Hsin-Jung Huang ,  Chun-Mao Chiu ,  Chia-Chi Hsiao ,  Yung-Cheng Chang

IPC分类号： H01L27/146 ,  H01L31/0232 ,  H01L31/18

CPC分类号： H01L27/14687 ,  H01L27/14618 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14683 ,  H01L27/14685 ,  H01L31/028 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is a semiconductor image sensor device that includes a non-scribe-line region and a scribe-line region. The image sensor device includes a first substrate portion disposed in the non-scribe-line region. The first substrate portion contains a doped radiation-sensing region. The image sensor device includes a second substrate portion disposed in the scribe-line region. The second substrate portion has the same material composition as the first substrate portion. Also provided is a method of fabricating an image sensor device. The method includes forming a plurality of radiation-sensing regions in a substrate. The radiation-sensing regions are formed in a non-scribe-line region of the image sensor device. The method includes forming an opening in a scribe-line region of the image sensor device by etching the substrate in the scribe-line region. A portion of the substrate remains in the scribe-line region after the etching. The method includes filling the opening with an organic material.

摘要翻译： 提供了包括非划线区域和划线区域的半导体图像传感器装置。 图像传感器装置包括设置在非划线区域中的第一基板部分。 第一衬底部分包含掺杂的辐射感测区域。 图像传感器装置包括设置在划线区域中的第二基板部分。 第二基板部分具有与第一基板部分相同的材料组成。 还提供了一种制造图像传感器装置的方法。 该方法包括在衬底中形成多个辐射感测区域。 辐射感测区域形成在图像传感器装置的非划线区域中。 该方法包括通过在划线区域中蚀刻基板来在图像传感器装置的划线区域中形成开口。 在蚀刻之后，衬底的一部分保留在划线区域中。 该方法包括用有机材料填充开口。

公开(公告)号：US20130084660A1

公开(公告)日：2013-04-04

申请号：US13335817

申请日：2011-12-22

申请人： Shou Shu Lu ,  Hsun-Ying Huang ,  I-Chang Lin ,  Chia-Chi Hsiao ,  Yung-Cheng Chang

发明人： Shou Shu Lu ,  Hsun-Ying Huang ,  I-Chang Lin ,  Chia-Chi Hsiao ,  Yung-Cheng Chang

IPC分类号： H01L21/66 ,  H01L31/02

CPC分类号： H01L31/1864 ,  H01L22/12 ,  H01L22/20 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/14698

摘要： A method of forming an image sensor device includes forming a light sensing region at a front surface of a silicon substrate and a patterned metal layer there over. Thereafter, the method also includes performing an ion implantation process to the back surface of the silicon substrate and performing a green laser annealing process to the implanted back surface of the silicon substrate. The green laser annealing process uses an annealing temperature greater than or equal to about 1100° C. for a duration of about 100 to about 400 nsec. After performing the green laser annealing process, a silicon polishing process is performed on the back surface of the silicon substrate.

摘要翻译： 形成图像传感器装置的方法包括在硅衬底的前表面上形成感光区域，并在其上形成图案化的金属层。 此后，该方法还包括对硅衬底的背面进行离子注入工艺，并对硅衬底的注入背面进行绿色激光退火处理。 绿色激光退火工艺使用大于或等于约1100℃的退火温度约100至约400纳秒的持续时间。 在进行绿色激光退火处理之后，在硅衬底的背面进行硅研磨处理。

公开(公告)号：US08815723B2

公开(公告)日：2014-08-26

申请号：US13335817

申请日：2011-12-22

申请人： Shou Shu Lu ,  Hsun-Ying Huang ,  I-Chang Lin ,  Chia-Chi Hsiao ,  Yung-Cheng Chang

发明人： Shou Shu Lu ,  Hsun-Ying Huang ,  I-Chang Lin ,  Chia-Chi Hsiao ,  Yung-Cheng Chang

IPC分类号： H01L21/22 ,  H01L27/146

CPC分类号： H01L31/1864 ,  H01L22/12 ,  H01L22/20 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/14698

摘要： A method of forming an image sensor device includes forming a light sensing region at a front surface of a silicon substrate and a patterned metal layer there over. Thereafter, the method also includes performing an ion implantation process to the back surface of the silicon substrate and performing a green laser annealing process to the implanted back surface of the silicon substrate. The green laser annealing process uses an annealing temperature greater than or equal to about 1100° C. for a duration of about 100 to about 400 nsec. After performing the green laser annealing process, a silicon polishing process is performed on the back surface of the silicon substrate.

摘要翻译： 形成图像传感器装置的方法包括在硅衬底的前表面上形成感光区域，并在其上形成图案化的金属层。 此后，该方法还包括对硅衬底的背面执行离子注入工艺，并对硅衬底的注入后表面进行绿色激光退火处理。 绿色激光退火工艺使用大于或等于约1100℃的退火温度约100至约400纳秒的持续时间。 在进行绿色激光退火处理之后，在硅衬底的背面进行硅研磨处理。

公开(公告)号：US20110086444A1

公开(公告)日：2011-04-14

申请号：US12578707

申请日：2009-10-14

申请人： Wei-Chih Weng ,  Miau Shing Tsai ,  Hsun-Ying Huang

发明人： Wei-Chih Weng ,  Miau Shing Tsai ,  Hsun-Ying Huang

IPC分类号： H01L21/66

CPC分类号： H01L27/14689 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464

摘要： The present disclosure provides a method for making an integrated circuit. The method comprises processing a first surface of a substrate to create the integrated circuit and grinding a second surface of the substrate to remove material until the substrate is substantially close to a desire thickness. The method also includes performing a wet etch process over the second surface of the substrate and performing a chemical mechanical polishing (CMP) process over the second surface of the substrate to remove a pattern on the substrate. The second surface of the substrate is examined with a metrological instrument to determine if the second surface is substantially smooth; if the second surface is not substantially smooth, the steps of performing the CMP process and examining the second surface with the metrological instrument are repeated until the second surface is substantially smooth.

摘要翻译： 本公开提供了一种用于制造集成电路的方法。 该方法包括处理衬底的第一表面以产生集成电路并研磨衬底的第二表面以去除材料，直到衬底基本上接近期望厚度。 该方法还包括在衬底的第二表面上执行湿蚀刻工艺，并在衬底的第二表面上执行化学机械抛光（CMP）工艺，以去除衬底上的图案。 用计量仪器检查衬底的第二表面以确定第二表面是否基本上平滑; 如果第二表面基本上不平滑，则重复执行CMP处理和用计量器具检查第二表面的步骤，直到第二表面基本上平滑。

公开(公告)号：US20130134542A1

公开(公告)日：2013-05-30

申请号：US13305069

申请日：2011-11-28

申请人： Shou-Shu Lu ,  Hsun-Ying Huang ,  Hsin-Jung Huang ,  Chun-Mao Chiu ,  Chia-Chi Hsiao ,  Yung-Cheng Chang

发明人： Shou-Shu Lu ,  Hsun-Ying Huang ,  Hsin-Jung Huang ,  Chun-Mao Chiu ,  Chia-Chi Hsiao ,  Yung-Cheng Chang

IPC分类号： H01L27/146 ,  H01L31/0232 ,  H01L31/18

CPC分类号： H01L27/14687 ,  H01L27/14618 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14683 ,  H01L27/14685 ,  H01L31/028 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is a semiconductor image sensor device that includes a non-scribe-line region and a scribe-line region. The image sensor device includes a first substrate portion disposed in the non-scribe-line region. The first substrate portion contains a doped radiation-sensing region. The image sensor device includes a second substrate portion disposed in the scribe-line region. The second substrate portion has the same material composition as the first substrate portion. Also provided is a method of fabricating an image sensor device. The method includes forming a plurality of radiation-sensing regions in a substrate. The radiation-sensing regions are formed in a non-scribe-line region of the image sensor device. The method includes forming an opening in a scribe-line region of the image sensor device by etching the substrate in the scribe-line region. A portion of the substrate remains in the scribe-line region after the etching. The method includes filling the opening with an organic material.

摘要翻译： 提供了包括非划线区域和划线区域的半导体图像传感器装置。 图像传感器装置包括设置在非划线区域中的第一基板部分。 第一衬底部分包含掺杂的辐射感测区域。 图像传感器装置包括设置在划线区域中的第二基板部分。 第二基板部分具有与第一基板部分相同的材料组成。 还提供了一种制造图像传感器装置的方法。 该方法包括在衬底中形成多个辐射感测区域。 辐射感测区域形成在图像传感器装置的非划线区域中。 该方法包括通过在划线区域中蚀刻基板来在图像传感器装置的划线区域中形成开口。 在蚀刻之后，衬底的一部分保留在划线区域中。 该方法包括用有机材料填充开口。

公开(公告)号：US20130001722A1

公开(公告)日：2013-01-03

申请号：US13174073

申请日：2011-06-30

申请人： Cheng-Tsung Chen ,  Hsun-Ying Huang ,  Yung-Cheng Chang ,  Yung-Fu Yeh ,  Yu-Ping Chen ,  Chi-Yuan Liang ,  Shou Shu Lu ,  Juan-Lin Chen ,  Jia-Ren Chen ,  Horng-Daw Shen ,  Chi-Hsun Hsieh

发明人： Cheng-Tsung Chen ,  Hsun-Ying Huang ,  Yung-Cheng Chang ,  Yung-Fu Yeh ,  Yu-Ping Chen ,  Chi-Yuan Liang ,  Shou Shu Lu ,  Juan-Lin Chen ,  Jia-Ren Chen ,  Horng-Daw Shen ,  Chi-Hsun Hsieh

IPC分类号： H01L31/0232

CPC分类号： H01L31/02325 ,  H01L27/1461 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14689 ,  H01L31/0248

摘要： A system and method for image sensing is disclosed. An embodiment comprises a substrate with a pixel region, the substrate having a front side and a backside. A co-implant process is performed along the backside of the substrate opposing a photosensitive element positioned along the front side of the substrate. The co-implant process utilizes a first pre-amorphization implant process that creates a pre-amorphization region. A dopant is then implanted wherein the pre-amorphization region retards or reduces the diffusion or tailing of the dopants into the photosensitive region. An anti-reflective layer, a color filter, and a microlens may also be formed over the co-implant region.

摘要翻译： 公开了一种用于图像感测的系统和方法。 实施例包括具有像素区域的基板，该基板具有正面和背面。 沿着基板的背面与沿着基板的前侧定位的感光元件相对地进行共注入工艺。 共同植入工艺利用产生前非晶化区域的第一预非晶化植入工艺。 然后注入掺杂剂，其中预非晶化区域延迟或减少掺杂剂进入感光区域的扩散或拖尾。 还可以在共植入区域上形成抗反射层，滤色器和微透镜。

公开(公告)号：US20130119500A1

公开(公告)日：2013-05-16

申请号：US13295145

申请日：2011-11-14

申请人： Wei-Chih Weng ,  Hsun-Ying Huang ,  Yung-Cheng Chang ,  Jin-Hong Cho

发明人： Wei-Chih Weng ,  Hsun-Ying Huang ,  Yung-Cheng Chang ,  Jin-Hong Cho

IPC分类号： H01L31/0216

CPC分类号： H01L27/14623 ,  H01L27/1462 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14685

摘要： Provided is a semiconductor image sensor device. The image sensor device includes a semiconductor substrate that includes an array region and a black level correction region. The array region contains a plurality of radiation-sensitive pixels. The black level correction region contains one or more reference pixels. The substrate has a front side and a back side. The image sensor device includes a first compressively-stressed layer formed on the back side of the substrate. The first compressively-stressed layer contains silicon nitride. The image sensor device includes a metal shield formed on the compressively-stressed layer. The metal shield is formed over at least a portion of the black level correction region. The image sensor device includes a second compressively-stressed layer formed on the metal shield and the first compressively-stressed layer. The second compressively-stressed layer contains silicon oxide. A sidewall of the metal shield is protected by the second compressively-stressed layer.

摘要翻译： 提供了一种半导体图像传感器装置。 图像传感器装置包括具有阵列区域和黑色电平校正区域的半导体衬底。 阵列区域包含多个辐射敏感像素。 黑色电平校正区域包含一个或多个参考像素。 基板具有前侧和后侧。 图像传感器装置包括形成在基板的背面上的第一压缩应力层。 第一压应力层含有氮化硅。 图像传感器装置包括形成在压缩应力层上的金属屏蔽。 金属屏蔽形成在黑色电平校正区域的至少一部分上。 图像传感器装置包括形成在金属屏蔽和第一压缩应力层上的第二压缩应力层。 第二压应力层含有氧化硅。 金属屏蔽的侧壁由第二压应力层保护。