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    Dark current reduction for back side illuminated image sensor
    1.
    发明授权
    Dark current reduction for back side illuminated image sensor 有权
    背面照明图像传感器的暗电流降低

    公开(公告)号：US08772895B2

    公开(公告)日：2014-07-08

    申请号：US13305069

    申请日：2011-11-28

    申请人： Shou-Shu Lu ,  Hsun-Ying Huang ,  Hsin-Jung Huang ,  Chun-Mao Chiu ,  Chia-Chi Hsiao ,  Yung-Cheng Chang

    发明人： Shou-Shu Lu ,  Hsun-Ying Huang ,  Hsin-Jung Huang ,  Chun-Mao Chiu ,  Chia-Chi Hsiao ,  Yung-Cheng Chang

    IPC分类号： H01L27/146 ,  H01L31/0232 ,  H01L31/18

    CPC分类号： H01L27/14687 ,  H01L27/14618 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14683 ,  H01L27/14685 ,  H01L31/028 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Provided is a semiconductor image sensor device that includes a non-scribe-line region and a scribe-line region. The image sensor device includes a first substrate portion disposed in the non-scribe-line region. The first substrate portion contains a doped radiation-sensing region. The image sensor device includes a second substrate portion disposed in the scribe-line region. The second substrate portion has the same material composition as the first substrate portion. Also provided is a method of fabricating an image sensor device. The method includes forming a plurality of radiation-sensing regions in a substrate. The radiation-sensing regions are formed in a non-scribe-line region of the image sensor device. The method includes forming an opening in a scribe-line region of the image sensor device by etching the substrate in the scribe-line region. A portion of the substrate remains in the scribe-line region after the etching. The method includes filling the opening with an organic material.

    摘要翻译： 提供了包括非划线区域和划线区域的半导体图像传感器装置。 图像传感器装置包括设置在非划线区域中的第一基板部分。 第一衬底部分包含掺杂的辐射感测区域。 图像传感器装置包括设置在划线区域中的第二基板部分。 第二基板部分具有与第一基板部分相同的材料组成。 还提供了一种制造图像传感器装置的方法。 该方法包括在衬底中形成多个辐射感测区域。 辐射感测区域形成在图像传感器装置的非划线区域中。 该方法包括通过在划线区域中蚀刻基板来在图像传感器装置的划线区域中形成开口。 在蚀刻之后，衬底的一部分保留在划线区域中。 该方法包括用有机材料填充开口。

    DARK CURRENT REDUCTION FOR BACK SIDE ILLUMINATED IMAGE SENSOR
    2.
    发明申请
    DARK CURRENT REDUCTION FOR BACK SIDE ILLUMINATED IMAGE SENSOR 有权
    背面照明图像传感器的暗电流减少

    公开(公告)号：US20130134542A1

    公开(公告)日：2013-05-30

    申请号：US13305069

    申请日：2011-11-28

    申请人： Shou-Shu Lu ,  Hsun-Ying Huang ,  Hsin-Jung Huang ,  Chun-Mao Chiu ,  Chia-Chi Hsiao ,  Yung-Cheng Chang

    发明人： Shou-Shu Lu ,  Hsun-Ying Huang ,  Hsin-Jung Huang ,  Chun-Mao Chiu ,  Chia-Chi Hsiao ,  Yung-Cheng Chang

    IPC分类号： H01L27/146 ,  H01L31/0232 ,  H01L31/18

    CPC分类号： H01L27/14687 ,  H01L27/14618 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14683 ,  H01L27/14685 ,  H01L31/028 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Provided is a semiconductor image sensor device that includes a non-scribe-line region and a scribe-line region. The image sensor device includes a first substrate portion disposed in the non-scribe-line region. The first substrate portion contains a doped radiation-sensing region. The image sensor device includes a second substrate portion disposed in the scribe-line region. The second substrate portion has the same material composition as the first substrate portion. Also provided is a method of fabricating an image sensor device. The method includes forming a plurality of radiation-sensing regions in a substrate. The radiation-sensing regions are formed in a non-scribe-line region of the image sensor device. The method includes forming an opening in a scribe-line region of the image sensor device by etching the substrate in the scribe-line region. A portion of the substrate remains in the scribe-line region after the etching. The method includes filling the opening with an organic material.

    摘要翻译： 提供了包括非划线区域和划线区域的半导体图像传感器装置。 图像传感器装置包括设置在非划线区域中的第一基板部分。 第一衬底部分包含掺杂的辐射感测区域。 图像传感器装置包括设置在划线区域中的第二基板部分。 第二基板部分具有与第一基板部分相同的材料组成。 还提供了一种制造图像传感器装置的方法。 该方法包括在衬底中形成多个辐射感测区域。 辐射感测区域形成在图像传感器装置的非划线区域中。 该方法包括通过在划线区域中蚀刻基板来在图像传感器装置的划线区域中形成开口。 在蚀刻之后，衬底的一部分保留在划线区域中。 该方法包括用有机材料填充开口。

    PROCESS FOR ENHANCING IMAGE QUALITY OF BACKSIDE ILLUMINATED IMAGE SENSOR
    3.
    发明申请
    PROCESS FOR ENHANCING IMAGE QUALITY OF BACKSIDE ILLUMINATED IMAGE SENSOR 有权
    用于增强背光照明图像传感器的图像质量的方法

    公开(公告)号：US20130084660A1

    公开(公告)日：2013-04-04

    申请号：US13335817

    申请日：2011-12-22

    申请人： Shou Shu Lu ,  Hsun-Ying Huang ,  I-Chang Lin ,  Chia-Chi Hsiao ,  Yung-Cheng Chang

    发明人： Shou Shu Lu ,  Hsun-Ying Huang ,  I-Chang Lin ,  Chia-Chi Hsiao ,  Yung-Cheng Chang

    IPC分类号： H01L21/66 ,  H01L31/02

    CPC分类号： H01L31/1864 ,  H01L22/12 ,  H01L22/20 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/14698

    摘要： A method of forming an image sensor device includes forming a light sensing region at a front surface of a silicon substrate and a patterned metal layer there over. Thereafter, the method also includes performing an ion implantation process to the back surface of the silicon substrate and performing a green laser annealing process to the implanted back surface of the silicon substrate. The green laser annealing process uses an annealing temperature greater than or equal to about 1100° C. for a duration of about 100 to about 400 nsec. After performing the green laser annealing process, a silicon polishing process is performed on the back surface of the silicon substrate.

    摘要翻译： 形成图像传感器装置的方法包括在硅衬底的前表面上形成感光区域，并在其上形成图案化的金属层。 此后，该方法还包括对硅衬底的背面进行离子注入工艺，并对硅衬底的注入背面进行绿色激光退火处理。 绿色激光退火工艺使用大于或等于约1100℃的退火温度约100至约400纳秒的持续时间。 在进行绿色激光退火处理之后，在硅衬底的背面进行硅研磨处理。

    Process for enhancing image quality of backside illuminated image sensor
    4.
    发明授权
    Process for enhancing image quality of backside illuminated image sensor 有权
    用于提高背面照明图像传感器的图像质量的过程

    公开(公告)号：US08815723B2

    公开(公告)日：2014-08-26

    申请号：US13335817

    申请日：2011-12-22

    申请人： Shou Shu Lu ,  Hsun-Ying Huang ,  I-Chang Lin ,  Chia-Chi Hsiao ,  Yung-Cheng Chang

    发明人： Shou Shu Lu ,  Hsun-Ying Huang ,  I-Chang Lin ,  Chia-Chi Hsiao ,  Yung-Cheng Chang

    IPC分类号： H01L21/22 ,  H01L27/146

    CPC分类号： H01L31/1864 ,  H01L22/12 ,  H01L22/20 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/14698

    摘要： A method of forming an image sensor device includes forming a light sensing region at a front surface of a silicon substrate and a patterned metal layer there over. Thereafter, the method also includes performing an ion implantation process to the back surface of the silicon substrate and performing a green laser annealing process to the implanted back surface of the silicon substrate. The green laser annealing process uses an annealing temperature greater than or equal to about 1100° C. for a duration of about 100 to about 400 nsec. After performing the green laser annealing process, a silicon polishing process is performed on the back surface of the silicon substrate.

    摘要翻译： 形成图像传感器装置的方法包括在硅衬底的前表面上形成感光区域，并在其上形成图案化的金属层。 此后，该方法还包括对硅衬底的背面执行离子注入工艺，并对硅衬底的注入后表面进行绿色激光退火处理。 绿色激光退火工艺使用大于或等于约1100℃的退火温度约100至约400纳秒的持续时间。 在进行绿色激光退火处理之后，在硅衬底的背面进行硅研磨处理。