发明授权
US08778781B2 Method of growing a thin film, a method of forming a structure and a device
有权
生长薄膜的方法,形成结构的方法和装置
- 专利标题: Method of growing a thin film, a method of forming a structure and a device
- 专利标题(中): 生长薄膜的方法,形成结构的方法和装置
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申请号: US13054975申请日: 2009-07-24
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公开(公告)号: US08778781B2公开(公告)日: 2014-07-15
- 发明人: Christian Lang , Ying Jun James Huang , Thomas Heinz-Helmut Altebaeumer , Stephen Day , Jonathan Heffernan
- 申请人: Christian Lang , Ying Jun James Huang , Thomas Heinz-Helmut Altebaeumer , Stephen Day , Jonathan Heffernan
- 申请人地址: JP Osaka
- 专利权人: Sharp Kabushiki Kaisha
- 当前专利权人: Sharp Kabushiki Kaisha
- 当前专利权人地址: JP Osaka
- 代理机构: Renner, Otto, Boisselle & Sklar, LLP
- 优先权: GB0813565.3 20080724
- 国际申请: PCT/JP2009/063620 WO 20090724
- 国际公布: WO2010/010972 WO 20100128
- 主分类号: H01L21/20
- IPC分类号: H01L21/20 ; H01L23/48
摘要:
A method of growing a thin film comprises growing a thin film by conformally forming at least one layer over a substrate having structures extending from a surface of the substrate, whereby the or each layer is formed over the surface of the substrate and over the structures extending from the surface. The thickness of the conformal layer, or the sum of the thicknesses of the conformal layers, is at least half the average spacing of the structures, and; at least one of the height of the structures, the average spacing of the structures and the size of the smallest dimension of the structures is set so as to provide an enhanced growth rate for the or each conformal layer (compared to the growth rate over a planar substrate).
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