公开(公告)号：US20100313941A1

公开(公告)日：2010-12-16

申请号：US12482606

申请日：2009-06-11

申请人： Ying Jun James HUANG ,  Stephen DAY

发明人： Ying Jun James HUANG ,  Stephen DAY

IPC分类号： H01L31/00 ,  H01L21/28

CPC分类号： H01L31/035281 ,  H01L31/03529 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/068 ,  H01L31/0687 ,  H01L31/075 ,  Y02E10/544 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： A vertical multi-junction photovoltaic device includes a structured substrate including a plurality of substantially vertical elongated structures protruding from a planar surface of the structured substrate. An areal density of the elongated structures at a first sliced plane parallel to the planer surface is different than an areal density of the elongated structures at a second sliced plane parallel to the planar surface. The device further includes least a first sub-cell and a second sub-cell, each having a corresponding vertical p-n or p-i-n junction formed of conformal layers, the first sub-cell being formed in a first region incorporating the first sliced plane and the second sub-cell being formed above the first sub-cell in a second region incorporating the second sliced plane.

摘要翻译： 垂直多结光伏器件包括结构化衬底，其包括从结构化衬底的平坦表面突出的多个基本垂直的细长结构。 在平行于平面的第一切片平面上的细长结构的面密度不同于平行于平面的第二切片平面上的细长结构的面密度。 该器件还包括至少一个第一子单元和第二子单元，每个子单元具有由共形层形成的对应的垂直pn或pin结，第一子单元形成在包含第一切割平面的第一区域中，第二子单元 在包含第二切片平面的第二区域中形成在第一子单元上方的子单元。

公开(公告)号：US08778781B2

公开(公告)日：2014-07-15

申请号：US13054975

申请日：2009-07-24

申请人： Christian Lang ,  Ying Jun James Huang ,  Thomas Heinz-Helmut Altebaeumer ,  Stephen Day ,  Jonathan Heffernan

发明人： Christian Lang ,  Ying Jun James Huang ,  Thomas Heinz-Helmut Altebaeumer ,  Stephen Day ,  Jonathan Heffernan

IPC分类号： H01L21/20 ,  H01L23/48

CPC分类号： H01L21/02658 ,  B82Y10/00 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02521 ,  H01L31/03529 ,  H01L31/0543 ,  H01L31/1804 ,  H01L2924/0002 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521 ,  Y10T428/24355 ,  Y10T428/24364 ,  H01L2924/00

摘要： A method of growing a thin film comprises growing a thin film by conformally forming at least one layer over a substrate having structures extending from a surface of the substrate, whereby the or each layer is formed over the surface of the substrate and over the structures extending from the surface. The thickness of the conformal layer, or the sum of the thicknesses of the conformal layers, is at least half the average spacing of the structures, and; at least one of the height of the structures, the average spacing of the structures and the size of the smallest dimension of the structures is set so as to provide an enhanced growth rate for the or each conformal layer (compared to the growth rate over a planar substrate).

摘要翻译： 生长薄膜的方法包括通过在衬底上通过保形地形成至少一个层而生长薄膜，该衬底具有从衬底的表面延伸的结构，从而在衬底的表面上以及在衬底的表面上方形成 从表面。 共形层的厚度或共形层的厚度之和至少为结构平均间距的一半， 设置结构的高度，结构的平均间隔和结构的最小尺寸的尺寸中的至少一个，以便为该或每个共形层提供增强的生长速率（与在 平面基板）。

公开(公告)号：US08461451B2

公开(公告)日：2013-06-11

申请号：US12482606

申请日：2009-06-11

申请人： Ying Jun James Huang ,  Stephen Day

发明人： Ying Jun James Huang ,  Stephen Day

IPC分类号： H01L31/00 ,  H01L21/00

CPC分类号： H01L31/035281 ,  H01L31/03529 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/068 ,  H01L31/0687 ,  H01L31/075 ,  Y02E10/544 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： A vertical multi-junction photovoltaic device includes a structured substrate including a plurality of substantially vertical elongated structures protruding from a planar surface of the structured substrate. An areal density of the elongated structures at a first sliced plane parallel to the planer surface is different than an areal density of the elongated structures at a second sliced plane parallel to the planar surface. The device further includes least a first sub-cell and a second sub-cell, each having a corresponding vertical p-n or p-i-n junction formed of conformal layers, the first sub-cell being formed in a first region incorporating the first sliced plane and the second sub-cell being formed above the first sub-cell in a second region incorporating the second sliced plane.

摘要翻译： 垂直多结光伏器件包括结构化衬底，其包括从结构化衬底的平坦表面突出的多个基本垂直的细长结构。 在平行于平面的第一切片平面上的细长结构的面密度不同于平行于平面的第二切片平面上的细长结构的面密度。 该器件还包括至少一个第一子单元和第二子单元，每个子单元具有由共形层形成的对应的垂直pn或pin结，第一子单元形成在包含第一切割平面的第一区域中，第二子单元 在包含第二切片平面的第二区域中形成在第一子单元上方的子单元。

公开(公告)号：US20110139209A1

公开(公告)日：2011-06-16

申请号：US13054975

申请日：2009-07-24

申请人： Christian Lang ,  Ying Jun James Huang ,  Thomas Heinz-Helmut Altebaeumer ,  Stephen Day ,  Jonathan Heffernan

发明人： Christian Lang ,  Ying Jun James Huang ,  Thomas Heinz-Helmut Altebaeumer ,  Stephen Day ,  Jonathan Heffernan

IPC分类号： H01L31/04 ,  B05D1/36 ,  B05D5/12 ,  C23C16/00 ,  B32B3/10 ,  H01L21/20 ,  H01L29/40 ,  B82Y99/00

CPC分类号： H01L21/02658 ,  B82Y10/00 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02521 ,  H01L31/03529 ,  H01L31/0543 ,  H01L31/1804 ,  H01L2924/0002 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521 ,  Y10T428/24355 ,  Y10T428/24364 ,  H01L2924/00

摘要： A method of growing a thin film comprises growing a thin film by conformally forming at least one layer over a substrate having structures extending from a surface of the substrate, whereby the or each layer is formed over the surface of the substrate and over the structures extending from the surface. The thickness of the conformal layer, or the sum of the thicknesses of the conformal layers, is at least half the average spacing of the structures, and; at least one of the height of the structures, the average spacing of the structures and the size of the smallest dimension of the structures is set so as to provide an enhanced growth rate for the or each conformal layer (compared to the growth rate over a planar substrate).

摘要翻译： 生长薄膜的方法包括通过在衬底上通过保形地形成至少一个层而生长薄膜，该衬底具有从衬底的表面延伸的结构，从而在衬底的表面上以及在衬底的表面上方形成 从表面。 共形层的厚度或共形层的厚度之和至少为结构平均间距的一半， 设置结构的高度，结构的平均间隔和结构的最小尺寸的尺寸中的至少一个，以便为该或每个共形层提供增强的生长速率（与在 平面基板）。