Invention Grant
US08797791B2 Semiconductor integrated circuit device with reduced leakage current
有权
具有减小漏电流的半导体集成电路器件
- Patent Title: Semiconductor integrated circuit device with reduced leakage current
- Patent Title (中): 具有减小漏电流的半导体集成电路器件
-
Application No.: US13865279Application Date: 2013-04-18
-
Publication No.: US08797791B2Publication Date: 2014-08-05
- Inventor: Kenichi Osada , Koichiro Ishibashi , Yoshikazu Saitoh , Akio Nishida , Masaru Nakamichi , Naoki Kitai
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Stites & Harbison, PLLC.
- Agent Stephen J. Weyer, Esq.
- Priority: JP2001-168945 20010605; JP2002-017840 20020128
- Main IPC: H01L29/788
- IPC: H01L29/788 ; H01L21/8234 ; H01L21/8238 ; H01L27/088 ; H03K19/00 ; H01L27/092 ; H01L27/11 ; H01L27/105 ; G11C11/412
Abstract:
The gate tunnel leakage current is increased in the up-to-date process, so that it is necessary to reduce the gate tunnel leakage current in the LSI which is driven by a battery for use in a cellular phone and which needs to be in a standby mode at a low leakage current. In a semiconductor integrated circuit device, the ground source electrode lines of logic and memory circuits are kept at a ground potential in an active mode, and are kept at a voltage higher than the ground potential in an unselected standby mode. The gate tunnel leakage current can be reduced without destroying data.
Public/Granted literature
- US20130229860A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE WITH REDUCED LEAKAGE CURRENT Public/Granted day:2013-09-05
Information query
IPC分类:
