发明授权
- 专利标题: Plasma processing apparatus
- 专利标题(中): 等离子体处理装置
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申请号: US13003102申请日: 2009-06-16
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公开(公告)号: US08800484B2公开(公告)日: 2014-08-12
- 发明人: Naoki Matsumoto , Kazuyuki Kato , Masafumi Shikata , Kazuto Takai
- 申请人: Naoki Matsumoto , Kazuyuki Kato , Masafumi Shikata , Kazuto Takai
- 申请人地址: JP
- 专利权人: Tokyo Electron Limited
- 当前专利权人: Tokyo Electron Limited
- 当前专利权人地址: JP
- 代理机构: Cantor Colburn LLP
- 优先权: JP2008-178863 20080709; JP2008-178864 20080709
- 国际申请: PCT/JP2009/060916 WO 20090616
- 国际公布: WO2010/004836 WO 20100114
- 主分类号: C23C16/511
- IPC分类号: C23C16/511 ; H01L21/67 ; H01J37/32 ; H01L21/687 ; C23F1/00
摘要:
A plasma processing apparatus includes a processing container in which a plasma processing is performed on a substrate to be processed, a holding stage which is disposed in the processing container and holds thereon the substrate to be processed, a dielectric plate which is provided at a location facing the holding stage and transmits a microwave into the processing container, and a reactive gas supply unit which supplies a reactive gas for plasma processing toward the central region of the substrate to be processed held by the holding stage. Here, the reactive gas supply unit includes an injector base, which is disposed at a location more recessed inside the dielectric plate than a wall surface of the dielectric plate facing the holding stage. A supply hole, which supplies a reactive gas for plasma processing into the processing container, is formed in the injector base.
公开/授权文献
- US20110114261A1 PLASMA PROCESSING APPARATUS 公开/授权日:2011-05-19
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