发明授权
US08809976B2 Method and structure for a MRAM device with a bilayer passivation
有权
具有双层钝化的MRAM器件的方法与结构
- 专利标题： Method and structure for a MRAM device with a bilayer passivation
- 专利标题（中）： 具有双层钝化的MRAM器件的方法与结构
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申请号： US13244346申请日： 2011-09-24
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公开(公告)号： US08809976B2公开(公告)日： 2014-08-19
- 发明人: Chih-Ming Chen , Chung-Yi Yu , Cheng-Yuan Tsai , Kai-Wen Cheng
- 申请人： Chih-Ming Chen , Chung-Yi Yu , Cheng-Yuan Tsai , Kai-Wen Cheng
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L29/82
- IPC分类号： H01L29/82 ; H01L43/08 ; H01L27/22 ; G11C11/16 ; B82Y25/00 ; B82Y10/00
摘要：
The present disclosure provides a magnetoresistive random access memory (MRAM) device. The MRAM device includes a magnetic tunnel junction (MTJ) stack on a substrate; and a dual-layer passivation layer disposed around the MTJ stack. The dual-layer passivation layer includes an oxygen-free film formed adjacent sidewalls of the MTJ stack; and a moisture-blocking film formed around the oxygen-free film.