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    Technique for smoothing an interface between layers of a semiconductor device
    2.
    发明授权
    Technique for smoothing an interface between layers of a semiconductor device 有权
    用于平滑半导体器件的层之间的界面的技术

    公开(公告)号：US08772845B2

    公开(公告)日：2014-07-08

    申请号：US13240714

    申请日：2011-09-22

    申请人： Chih-Ming Chen ,  Cheng-Yuan Tsai ,  Chung-Yi Yu ,  Kai-Wen Cheng ,  Kuo-Ming Wu

    发明人： Chih-Ming Chen ,  Cheng-Yuan Tsai ,  Chung-Yi Yu ,  Kai-Wen Cheng ,  Kuo-Ming Wu

    IPC分类号： H01L21/02

    CPC分类号： H01L27/228 ,  H01L43/08 ,  H01L43/12

    摘要： The present disclosure provides a semiconductor memory device. The device includes a pinning layer having an anti-ferromagnetic material and disposed over a first electrode; a pinned layer disposed over the pinning layer; a composite layer disposed over the pinned layer, the composite layer having a magnetic material randomly distributed in a non-magnetic material; a barrier layer disposed on the composite layer; a free layer disposed over the barrier layer; and a second electrode disposed over the free layer.

    摘要翻译： 本公开提供一种半导体存储器件。 该装置包括具有反铁磁材料并设置在第一电极上的钉扎层; 设置在钉扎层上方的钉扎层; 复合层，其设置在所述被钉扎层上方，所述复合层具有随机分布在非磁性材料中的磁性材料; 设置在所述复合层上的阻挡层; 设置在阻挡层上的自由层; 以及设置在所述自由层上方的第二电极。

    TECHNIQUE FOR SMOOTHING AN INTERFACE BETWEEN LAYERS OF A SEMICONDUCTOR DEVICE
    4.
    发明申请
    TECHNIQUE FOR SMOOTHING AN INTERFACE BETWEEN LAYERS OF A SEMICONDUCTOR DEVICE 有权
    用于平滑半导体器件层之间的界面的技术

    公开(公告)号：US20130075837A1

    公开(公告)日：2013-03-28

    申请号：US13240714

    申请日：2011-09-22

    申请人： Chih-Ming Chen ,  Cheng-Yuan Tsai ,  Chung-Yi Yu ,  Kai-Wen Cheng ,  Kuo-Ming Wu

    发明人： Chih-Ming Chen ,  Cheng-Yuan Tsai ,  Chung-Yi Yu ,  Kai-Wen Cheng ,  Kuo-Ming Wu

    IPC分类号： H01L29/82 ,  H01L21/8246

    CPC分类号： H01L27/228 ,  H01L43/08 ,  H01L43/12

    摘要： The present disclosure provides a semiconductor memory device. The device includes a pinning layer having an anti-ferromagnetic material and disposed over a first electrode; a pinned layer disposed over the pinning layer; a composite layer disposed over the pinned layer, the composite layer having a magnetic material randomly distributed in a non-magnetic material; a barrier layer disposed on the composite layer; a free layer disposed over the barrier layer; and a second electrode disposed over the free layer.

    摘要翻译： 本公开提供一种半导体存储器件。 该装置包括具有反铁磁材料并设置在第一电极上的钉扎层; 设置在钉扎层上方的钉扎层; 复合层，其设置在所述被钉扎层上方，所述复合层具有随机分布在非磁性材料中的磁性材料; 设置在所述复合层上的阻挡层; 设置在阻挡层上的自由层; 以及设置在所述自由层上方的第二电极。

    Magnetic Tunnel Junction (MTJ) Structure in Magnetic Random Access Memory
    7.
    发明申请
    Magnetic Tunnel Junction (MTJ) Structure in Magnetic Random Access Memory 有权
    磁性随机存取存储器中的磁隧道结（MTJ）结构

    公开(公告)号：US20130228882A1

    公开(公告)日：2013-09-05

    申请号：US13410714

    申请日：2012-03-02

    申请人： Kai-Wen Cheng ,  Chwen Yu ,  Chih-Ming Chen

    发明人： Kai-Wen Cheng ,  Chwen Yu ,  Chih-Ming Chen

    IPC分类号： H01L29/82 ,  H01L21/8246

    CPC分类号： H01L43/08

    摘要： Methods and apparatuses for a magnetic tunnel junction (MTJ) which can be used in as a magnetic random access memory cell are disclosed. The MTJ comprises a free layer and an insulator layer. The MTJ further comprises a pinned layer with a first region, a second region, and a third region. The second region is of a first length and of a first thickness, and the first region and the third region are of a second length and of a second thickness. A ratio of the first thickness to the second thickness may be larger than 1.2. A ratio of the second length to the first length is larger than 0.5. The first thickness may be larger than a spin diffusion length of a material for the pinned layer. So formed MTJ results in increased tunneling magnetic resistance ratio and reduced critical switch current of the MTJ.

    摘要翻译： 公开了可用作磁性随机存取存储器单元的磁性隧道结（MTJ）的方法和装置。 MTJ包括自由层和绝缘体层。 MTJ还包括具有第一区域，第二区域和第三区域的钉扎层。 第二区域具有第一长度和第一厚度，并且第一区域和第三区域具有第二长度和第二厚度。 第一厚度与第二厚度之比可以大于1.2。 第二长度与第一长度的比率大于0.5。 第一厚度可以大于用于钉扎层的材料的自旋扩散长度。 所形成的MTJ导致隧道磁阻比提高，MTJ的关键开关电流降低。

    Magnetic tunnel junction (MTJ) structure in magnetic random access memory
    8.
    发明授权
    Magnetic tunnel junction (MTJ) structure in magnetic random access memory 有权
    磁性随机存取存储器中的磁隧道结（MTJ）结构

    公开(公告)号：US09343656B2

    公开(公告)日：2016-05-17

    申请号：US13410714

    申请日：2012-03-02

    申请人： Kai-Wen Cheng ,  Chwen Yu ,  Chih-Ming Chen

    发明人： Kai-Wen Cheng ,  Chwen Yu ,  Chih-Ming Chen

    IPC分类号： H01L29/82 ,  H01L43/08

    CPC分类号： H01L43/08

    摘要： Methods and apparatuses for a magnetic tunnel junction (MTJ) which can be used in as a magnetic random access memory cell are disclosed. The MTJ comprises a free layer and an insulator layer. The MTJ further comprises a pinned layer with a first region, a second region, and a third region. The second region is of a first length and of a first thickness, and the first region and the third region are of a second length and of a second thickness. A ratio of the first thickness to the second thickness may be larger than 1.2. A ratio of the second length to the first length is larger than 0.5. The first thickness may be larger than a spin diffusion length of a material for the pinned layer. So formed MTJ results in increased tunneling magnetic resistance ratio and reduced critical switch current of the MTJ.

    摘要翻译： 公开了可用作磁性随机存取存储器单元的磁性隧道结（MTJ）的方法和装置。 MTJ包括自由层和绝缘体层。 MTJ还包括具有第一区域，第二区域和第三区域的钉扎层。 第二区域具有第一长度和第一厚度，并且第一区域和第三区域具有第二长度和第二厚度。 第一厚度与第二厚度之比可以大于1.2。 第二长度与第一长度的比率大于0.5。 第一厚度可以大于用于钉扎层的材料的自旋扩散长度。 所形成的MTJ导致隧道磁阻比提高，MTJ的关键开关电流降低。

    Method and device for establishing network connection
    9.
    发明授权
    Method and device for establishing network connection 有权
    建立网络连接的方法和设备

    公开(公告)号：US08755529B2

    公开(公告)日：2014-06-17

    申请号：US13336697

    申请日：2011-12-23

    申请人： Liang-Wei Huang ,  Cheng-Han Lee ,  Yi-Huei Lei ,  Kai-Wen Cheng

    发明人： Liang-Wei Huang ,  Cheng-Han Lee ,  Yi-Huei Lei ,  Kai-Wen Cheng

    IPC分类号： H04K1/00

    CPC分类号： H04K1/04

    摘要： A device for establishing network connection is disclosed, having a transmitting circuit, a receiving circuit, and a controller. The transmitting circuit, comprising a first scrambler having a plurality of first registers, transmits a first data scrambled by the first scrambler to a transmission line according to an oscillating signal generated by an oscillation circuit. The receiving circuit receives a second data scrambled by a second scrambler from the transmission line and comprises a descrambler having a plurality of second registers for descrambling the second data. The first and the second scramblers use the same scrambler generator polynomial. The controller compares at least one of the first data and the value of the first registers and at least one of the second data and the values of the second registers for configuring the oscillation circuit to adjust the frequency of the oscillating signal.

    摘要翻译： 公开了一种用于建立网络连接的装置，具有发送电路，接收电路和控制器。 发送电路包括具有多个第一寄存器的第一加扰器，根据由振荡电路产生的振荡信号，将由第一加扰器加扰的第一数据发送到传输线。 接收电路从传输线接收由第二扰频器加扰的第二数据，并且包括具有用于解扰第二数据的多个第二寄存器的解扰器。 第一和第二加扰器使用相同的加扰器生成器多项式。 控制器比较第一数据和第一寄存器的值中的至少一个以及第二数据和第二寄存器的值中的至少一个，用于配置振荡电路以调整振荡信号的频率。

    Double patterning method using tilt-angle deposition
    10.
    发明授权
    Double patterning method using tilt-angle deposition 有权
    使用倾斜角沉积的双重图案化方法

    公开(公告)号：US08709267B2

    公开(公告)日：2014-04-29

    申请号：US13188248

    申请日：2011-07-21

    申请人： Chwen Yu ,  Fei-Gwo Tsai ,  Kai-Wen Cheng

    发明人： Chwen Yu ,  Fei-Gwo Tsai ,  Kai-Wen Cheng

    IPC分类号： H01L21/302

    CPC分类号： H01L21/0272 ,  G03F7/0035

    摘要： Methods for patterning material layers, which may be implemented in forming integrated circuit device features, are disclosed. In an example, a method includes forming a first resist layer over a material layer; forming a second resist layer over the first resist layer; forming an opening that extends through the second resist layer and the first resist layer to expose the material layer, wherein the opening has a substantially constant width in the second resist layer and a tapered width in the first resist layer; and performing a tilt-angle deposition process to form a feature over the exposed material layer.

    摘要翻译： 公开了可以在形成集成电路器件特征中实现的图案化材料层的方法。 在一个实例中，一种方法包括在材料层上形成第一抗蚀剂层; 在所述第一抗蚀剂层上形成第二抗蚀剂层; 形成延伸穿过所述第二抗蚀剂层和所述第一抗蚀剂层以暴露所述材料层的开口，其中所述开口在所述第二抗蚀剂层中具有基本上恒定的宽度，并且所述第一抗蚀剂层中具有锥形宽度; 以及进行倾斜角淀积处理以在所述暴露的材料层上形成特征。