发明授权
- 专利标题： Transistors with an extension region having strips of differing conductivity type and methods of forming the same
- 专利标题（中）： 具有延伸区域的晶体管具有不同导电类型的条带及其形成方法
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申请号： US12639158申请日： 2009-12-16
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公开(公告)号： US08815667B2公开(公告)日： 2014-08-26
- 发明人: Michael Smith , Vladimir Mikhalev , Puneet Sharma , Zia Alan Shafi , Henry Jim Fulford
- 申请人： Michael Smith , Vladimir Mikhalev , Puneet Sharma , Zia Alan Shafi , Henry Jim Fulford
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Dicke, Billig & Czaja, PLLC
- 主分类号： H01L21/338
- IPC分类号： H01L21/338
摘要：
Methods of forming transistors and transistors are disclosed, such as a transistor having a gate dielectric over a semiconductor having a first conductivity type, a control gate over the gate dielectric, source and drain regions having a second conductivity type in the semiconductor having the first conductivity type, and strips having the second conductivity type within the semiconductor having the first conductivity type and interposed between the control gate and at least one of the source and drain regions.
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