Invention Grant
- Patent Title: Focused ion beam apparatus
- Patent Title (中): 聚焦离子束装置
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Application No.: US13065698Application Date: 2011-03-28
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Publication No.: US08822945B2Publication Date: 2014-09-02
- Inventor: Kenichi Nishinaka , Takashi Ogawa , Yoshihiro Koyama
- Applicant: Kenichi Nishinaka , Takashi Ogawa , Yoshihiro Koyama
- Applicant Address: JP
- Assignee: SII NanoTechnology Inc.
- Current Assignee: SII NanoTechnology Inc.
- Current Assignee Address: JP
- Agency: Adams & Wilks
- Priority: JP2010-076336 20100329
- Main IPC: G01N23/225
- IPC: G01N23/225 ; H01J49/42 ; H01J3/26

Abstract:
A focused ion beam apparatus includes a gas field ion gun unit having an emitter, an ion source gas supply unit for supplying different ion source gases to the emitter, a heater for heating the emitter, and an extraction electrode. A storage section stores, for each gas of a plurality of different types, set values of emitter temperature, gas pressure, extraction voltage to be applied to an extraction electrode, image contrast and image brightness. An input section selects and inputs one of the gas types. A control section reads, from the storage section, the set values of emitter temperature, gas pressure, extraction voltage, image contrast and image brightness, which correspond to the input gas type, and sets a heater, a gas control section, a voltage control section, and an adjustment section for the contrast and brightness of the image.
Public/Granted literature
- US20110233401A1 Focused ion beam apparatus Public/Granted day:2011-09-29
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