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US08829682B2 Integrated circuit devices including interconnections insulated by air gaps and methods of fabricating the same 有权
集成电路器件包括通过气隙绝缘的互连及其制造方法

Integrated circuit devices including interconnections insulated by air gaps and methods of fabricating the same
Abstract:
Semiconductor devices and methods of fabricating the same are provided. The semiconductor device may include interconnections extending in a first direction on a substrate and spaced apart from each other in a second direction perpendicular to the first direction, barrier dielectric patterns disposed on top surfaces of the interconnections, respectively, and an upper interlayer dielectric layer disposed on the interconnection. Respective air gaps are disposed between adjacent ones of the interconnections.
Abstract(Chinese):

提供半导体器件及其制造方法。 半导体器件可以包括在衬底上沿着第一方向延伸并且在垂直于第一方向的第二方向彼此间隔开的互连，分别设置在互连的顶表面上的势垒电介质图案和布置在 在互连上。 相应的气隙设置在相邻的互连之间。

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