发明授权
US08835260B2 Control of threshold voltages in high-k metal gate stack and structures for CMOS devices
有权
控制高k金属栅极堆栈中的阈值电压和CMOS器件的结构
- 专利标题： Control of threshold voltages in high-k metal gate stack and structures for CMOS devices
- 专利标题（中）： 控制高k金属栅极堆栈中的阈值电压和CMOS器件的结构
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申请号： US13547792申请日： 2012-07-12
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公开(公告)号： US08835260B2公开(公告)日： 2014-09-16
- 发明人: Hemanth Jagannathan , Takashi Ando , Vijay Narayanan
- 申请人： Hemanth Jagannathan , Takashi Ando , Vijay Narayanan
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Cantor Colburn LLP
- 代理商 Louis Percello
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234 ; H01L21/4763 ; H01L21/8238 ; H01L21/28 ; H01L29/66 ; H01L29/10
摘要：
A high-k metal gate stack and structures for CMOS devices and a method for forming the devices. The gate stack includes a germanium (Ge) material layer formed on the semiconductor substrate, a diffusion barrier layer formed on the Ge material layer, a high-k dielectric having a high dielectric constant greater than approximately 3.9 formed over the diffusion barrier layer, and a conductive electrode layer formed above the high-k dielectric layer.
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