Invention Grant
- Patent Title: Semiconductor device including high-k/metal gate electrode
- Patent Title (中): 半导体器件包括高k /金属栅电极
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Application No.: US13313607Application Date: 2011-12-07
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Publication No.: US08836039B2Publication Date: 2014-09-16
- Inventor: Jun Suzuki , Hiroshi Nakagawa
- Applicant: Jun Suzuki , Hiroshi Nakagawa
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2009-156952 20090701
- Main IPC: H01L21/70
- IPC: H01L21/70 ; C23C16/34 ; H01L21/8238 ; H01L21/28 ; C23C16/455 ; H01L29/51 ; H01L29/49 ; H01L29/78 ; H01L29/66
Abstract:
A semiconductor device includes a high dielectric gate insulating film formed on a substrate, and a metal gate electrode formed on the high dielectric gate insulating film. The metal gate electrode includes a crystalline portion and an amorphous portion. A halogen element is eccentrically located in the amorphous portion.
Public/Granted literature
- US20120080756A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2012-04-05
Information query
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